A Ka-Band GaAs MMIC Traveling-Wave Switch with Absorptive Characteristic

Kim Tuyen Trinh*, Hsuan Ling Kao, Hsien Chin Chiu, Nemai Chandra Karmakar

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

28 Scopus citations


A 36-38-GHz monolithic microwave integrated circuit (MMIC) single-pole double-throw (SPDT) switch employing a traveling-wave concept with absorptive characteristic is presented. The switch uses absorptive sections for better impedance matching in all ports. The switch obtained good linearity with the insertion loss of 3.2 dB, more than 28-dB isolation, and the return losses at all the ports are larger than 8.1 dB within the bandwidth of interest (36-38 GHz). The switch was fabricated by using GaAs 0.15-μm process. The chip area is very compact, just about 1 mm × 1.1 mm, including all the pads. To our best knowledge, this is the first GaAs MMIC traveling-wave switch type that has the absorptive characteristic.

Original languageEnglish
Article number8720036
Pages (from-to)394-396
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number6
StatePublished - 06 2019

Bibliographical note

Publisher Copyright:
© 2019 IEEE.


  • Absorptive switch
  • GaAs 015-μm process
  • passive HEMTs
  • single-pole double-throw (SPDT) monolithic microwave integrated circuit (MMIC) switch
  • traveling wave


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