A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line

Hsien Chin Chiu; Ting Huei Chen; Jeffrey S. Fu; T. A. Nirmalathas

doi:10.1002/mop.25910

A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line

Hsien Chin Chiu^*, Ting Huei Chen, Jeffrey S. Fu, T. A. Nirmalathas

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A high-gain Ka-band 0.18-μm CMOS low-noise amplifier with semicircle stacked grounded coplanar waveguide (SCS-GCPW) structure transmission line is proposed. SCS-GCPW transmission line is adopted to reduce the signal loss by shaping the electric fields under the signal line especially at microwave and millimeter wave applications. The SCS-GCPW demonstrated a similar electric field distribution of coaxial cable and achieved a substrate dielectric attenuation constant of 0.075 Np/m. It is superior to 0.081 Np/m and 0.144 Np/m of traditional microstrip transmission line and CPW transmission line, respectively. By adopting the low loss SCS-GCPW transmission line, the Ka-band LNA demonstrated a 24.5 dB gain together with a noise figure (NF) of 7.5 dB at 33 GHz operation. The measured output power 1 dB compression point (P _{1 dB}) was -2 dBm. The dc power consumption was 40 mW and chip size was 0.6 × 1 mm² for this Ka-band LNA.

Original language	English
Pages (from-to)	1131-1134
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	53
Issue number	5
DOIs	https://doi.org/10.1002/mop.25910
State	Published - 05 2011

Keywords

0.18-μm CMOS
SCS-GCPW
low-noise amplifiers

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10.1002/mop.25910

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title = "A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line",

abstract = "A high-gain Ka-band 0.18-μm CMOS low-noise amplifier with semicircle stacked grounded coplanar waveguide (SCS-GCPW) structure transmission line is proposed. SCS-GCPW transmission line is adopted to reduce the signal loss by shaping the electric fields under the signal line especially at microwave and millimeter wave applications. The SCS-GCPW demonstrated a similar electric field distribution of coaxial cable and achieved a substrate dielectric attenuation constant of 0.075 Np/m. It is superior to 0.081 Np/m and 0.144 Np/m of traditional microstrip transmission line and CPW transmission line, respectively. By adopting the low loss SCS-GCPW transmission line, the Ka-band LNA demonstrated a 24.5 dB gain together with a noise figure (NF) of 7.5 dB at 33 GHz operation. The measured output power 1 dB compression point (P 1 dB) was -2 dBm. The dc power consumption was 40 mW and chip size was 0.6 × 1 mm2 for this Ka-band LNA.",

keywords = "0.18-μm CMOS, SCS-GCPW, low-noise amplifiers",

author = "Chiu, \{Hsien Chin\} and Chen, \{Ting Huei\} and Fu, \{Jeffrey S.\} and Nirmalathas, \{T. A.\}",

year = "2011",

month = may,

doi = "10.1002/mop.25910",

language = "英语",

volume = "53",

pages = "1131--1134",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

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T1 - A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line

AU - Chiu, Hsien Chin

AU - Chen, Ting Huei

AU - Fu, Jeffrey S.

AU - Nirmalathas, T. A.

PY - 2011/5

Y1 - 2011/5

N2 - A high-gain Ka-band 0.18-μm CMOS low-noise amplifier with semicircle stacked grounded coplanar waveguide (SCS-GCPW) structure transmission line is proposed. SCS-GCPW transmission line is adopted to reduce the signal loss by shaping the electric fields under the signal line especially at microwave and millimeter wave applications. The SCS-GCPW demonstrated a similar electric field distribution of coaxial cable and achieved a substrate dielectric attenuation constant of 0.075 Np/m. It is superior to 0.081 Np/m and 0.144 Np/m of traditional microstrip transmission line and CPW transmission line, respectively. By adopting the low loss SCS-GCPW transmission line, the Ka-band LNA demonstrated a 24.5 dB gain together with a noise figure (NF) of 7.5 dB at 33 GHz operation. The measured output power 1 dB compression point (P 1 dB) was -2 dBm. The dc power consumption was 40 mW and chip size was 0.6 × 1 mm2 for this Ka-band LNA.

AB - A high-gain Ka-band 0.18-μm CMOS low-noise amplifier with semicircle stacked grounded coplanar waveguide (SCS-GCPW) structure transmission line is proposed. SCS-GCPW transmission line is adopted to reduce the signal loss by shaping the electric fields under the signal line especially at microwave and millimeter wave applications. The SCS-GCPW demonstrated a similar electric field distribution of coaxial cable and achieved a substrate dielectric attenuation constant of 0.075 Np/m. It is superior to 0.081 Np/m and 0.144 Np/m of traditional microstrip transmission line and CPW transmission line, respectively. By adopting the low loss SCS-GCPW transmission line, the Ka-band LNA demonstrated a 24.5 dB gain together with a noise figure (NF) of 7.5 dB at 33 GHz operation. The measured output power 1 dB compression point (P 1 dB) was -2 dBm. The dc power consumption was 40 mW and chip size was 0.6 × 1 mm2 for this Ka-band LNA.

KW - 0.18-μm CMOS

KW - SCS-GCPW

KW - low-noise amplifiers

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U2 - 10.1002/mop.25910

DO - 10.1002/mop.25910

M3 - 文章

AN - SCOPUS:79952941338

SN - 0895-2477

VL - 53

SP - 1131

EP - 1134

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 5

ER -

A Ka-band low-noise amplifier using semicircle stacked-GCPW transmission line

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Keywords

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