A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology

Chia Shih Cheng; Chien Cheng Wei; Hsien Chin Chiu; Yi Chyun Chiang; Jeffrey S. Fu; Chia Song Wu

doi:10.1109/GSMM.2008.4534565

A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology

Chia Shih Cheng^*, Chien Cheng Wei, Hsien Chin Chiu, Yi Chyun Chiang, Jeffrey S. Fu, Chia Song Wu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid back-side process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.

Original language	English
Title of host publication	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
Publisher	IEEE Computer Society
Pages	87-90
Number of pages	4
ISBN (Print)	9781424418855
DOIs	https://doi.org/10.1109/GSMM.2008.4534565
State	Published - 2008
Event	2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China Duration: 21 04 2008 → 24 04 2008

Publication series

Name	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference	2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/Territory	China
City	Nanjing
Period	21/04/08 → 24/04/08

Keywords

Amplifier
CPW
GaAs pHEMT
Millimeter wave
Mixer
Oscillator

Access to Document

10.1109/GSMM.2008.4534565

Cite this

Cheng, C. S., Wei, C. C., Chiu, H. C., Chiang, Y. C., Fu, J. S., & Wu, C. S. (2008). A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology. In 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008 (pp. 87-90). Article 4534565 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008). IEEE Computer Society. https://doi.org/10.1109/GSMM.2008.4534565

@inproceedings{91afcee7ee17400d88c042a0d3e9e5eb,

title = "A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology",

abstract = "This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid back-side process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.",

keywords = "Amplifier, CPW, GaAs pHEMT, Millimeter wave, Mixer, Oscillator",

author = "Cheng, {Chia Shih} and Wei, {Chien Cheng} and Chiu, {Hsien Chin} and Chiang, {Yi Chyun} and Fu, {Jeffrey S.} and Wu, {Chia Song}",

year = "2008",

doi = "10.1109/GSMM.2008.4534565",

language = "英语",

isbn = "9781424418855",

series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

publisher = "IEEE Computer Society",

pages = "87--90",

booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

address = "美国",

note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",

}

Cheng, CS, Wei, CC, Chiu, HC , Chiang, YC, Fu, JS & Wu, CS 2008, A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology. in 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008., 4534565, 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008, IEEE Computer Society, pp. 87-90, 2008 Global Symposium on Millimeter Waves, GSMM 2008, Nanjing, China, 21/04/08. https://doi.org/10.1109/GSMM.2008.4534565

A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology. / Cheng, Chia Shih; Wei, Chien Cheng; Chiu, Hsien Chin et al.
2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008. IEEE Computer Society, 2008. p. 87-90 4534565 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology

AU - Cheng, Chia Shih

AU - Wei, Chien Cheng

AU - Chiu, Hsien Chin

AU - Chiang, Yi Chyun

AU - Fu, Jeffrey S.

AU - Wu, Chia Song

PY - 2008

Y1 - 2008

N2 - This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid back-side process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.

AB - This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid back-side process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.

KW - Amplifier

KW - CPW

KW - GaAs pHEMT

KW - Millimeter wave

KW - Mixer

KW - Oscillator

UR - http://www.scopus.com/inward/record.url?scp=50449110731&partnerID=8YFLogxK

U2 - 10.1109/GSMM.2008.4534565

DO - 10.1109/GSMM.2008.4534565

M3 - 会议稿件

AN - SCOPUS:50449110731

SN - 9781424418855

T3 - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

SP - 87

EP - 90

BT - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

PB - IEEE Computer Society

T2 - 2008 Global Symposium on Millimeter Waves, GSMM 2008

Y2 - 21 April 2008 through 24 April 2008

ER -

A Ka-band monolithic CPW-mode T/R modules using 0. 15 μm gate-length GaAs pHEMT technology

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this