A low phase noise Ka-band voltage controlled oscillator using 0.15 μm GaAs pHEMT technology

H. L. Kao*, S. P. Shih, C. S. Yeh, L. C. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A low phase noise, low dissipated power and small sized Ka-band voltage-controlled oscillator (VCO), using dual cross-coupled pair configuration and capacitance-splitting technique is presented. The Ka-band VCO circuit uses 0.15 m GaAs pHEMT technology. The VCO has low phase noise, of 116.36 dBc/Hz, at a 1 MHz offset and can be tuned from 30.5 to 31.22 GHz. The figure of merit (FOM) is -192.36 dBc/Hz. The power consumption of the VCO with 1.04 mm 2 chip area was 24 mW, from a 1 V power supply.

Original languageEnglish
Title of host publicationProceedings of the 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012
Pages79-82
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012 - Tallinn, Estonia
Duration: 18 04 201220 04 2012

Publication series

NameProceedings of the 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012

Conference

Conference2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits and Systems, DDECS 2012
Country/TerritoryEstonia
CityTallinn
Period18/04/1220/04/12

Keywords

  • GaAs pHEMT
  • phase noise
  • voltage controlled oscillators (VCOs)

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