A low phase noise quadrature ring oscillator using 0.5μm GaN-on-Si HEMT

Fan Hsiu Huang, Guan Ting Lee, Hsien Chin Chiu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A quadrature ring oscillator designed for wireless communications has been and implemented in 0.5 μm GaN-on-Si HEMT technology. Based on the large-signal GaN HEMT and the transmission line models on silicon substrate, the oscillation frequency and output power can be predicted accurately in the simulation. The operating frequency of the two-stage ring oscillator is close to 5.76 GHz. By using a spiral inductor to be a resonated load in the differential pair, the measured output power of 9.9 dBm can be achieved for each output port without using buffer amplifiers at a 10-V dc supply. The oscillator has an output phase noise of -116 dBc/Hz at 1-MHz offset frequency. A 2 nd-order subharmonic injection technique was used to further improve the phase noise performance. The improved phase noise is -131 dBc/Hz at 1-MHz offset under injection locking status.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013
Subtitle of host publication43rd European Microwave Conference
Pages1499-1502
Number of pages4
StatePublished - 2013
Event2013 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013 - Nuremberg, Germany
Duration: 07 10 201310 10 2013

Publication series

NameEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference

Conference

Conference2013 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013
Country/TerritoryGermany
CityNuremberg
Period07/10/1310/10/13

Keywords

  • GaN HEMT
  • Ring oscillator
  • phase noise
  • quadrature signal

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