A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

H. L. Kao; Albert Chin; K. C. Chang; S. P. McAlister

doi:10.1109/SMIC.2007.322807

A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

H. L. Kao^*, Albert Chin, K. C. Chang, S. P. McAlister

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 μm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.

Original language	English
Title of host publication	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages	257-260
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2007.322807
State	Published - 2007
Event	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States Duration: 10 01 2007 → 12 01 2007

Publication series

Name	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Country/Territory	United States
City	Long Beach, CA
Period	10/01/07 → 12/01/07

Keywords

CMOS
Low noise amplifier
Low power
Ultra-wideband

Access to Document

10.1109/SMIC.2007.322807

Cite this

Kao, H. L., Chin, A., Chang, K. C., & McAlister, S. P. (2007). A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz. In 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 (pp. 257-260). Article 4117374 (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07). https://doi.org/10.1109/SMIC.2007.322807

@inproceedings{abb90429a08a4818bc0559ca4cbd8174,

title = "A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz",

abstract = "We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 μm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.",

keywords = "CMOS, Low noise amplifier, Low power, Ultra-wideband",

author = "Kao, {H. L.} and Albert Chin and Chang, {K. C.} and McAlister, {S. P.}",

year = "2007",

doi = "10.1109/SMIC.2007.322807",

language = "英语",

isbn = "0780397649",

series = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

pages = "257--260",

booktitle = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

note = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 ; Conference date: 10-01-2007 Through 12-01-2007",

}

Kao, HL, Chin, A, Chang, KC & McAlister, SP 2007, A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz. in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07., 4117374, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, pp. 257-260, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, Long Beach, CA, United States, 10/01/07. https://doi.org/10.1109/SMIC.2007.322807

A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz. / Kao, H. L.; Chin, Albert; Chang, K. C. et al.
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. p. 257-260 4117374 (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

AU - Kao, H. L.

AU - Chin, Albert

AU - Chang, K. C.

AU - McAlister, S. P.

PY - 2007

Y1 - 2007

N2 - We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 μm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.

AB - We present an ultra-wideband 3.1-10.6 GHz low-noise amplifier which uses a two-stage current-reuse structure to reduce the power. Fabricated in a 0.18 μm CMOS process, the IC prototype achieved a power gain of 9.3 dB, a noise figure (NF) of < 5.6 dB, an input match of < -8 dB over the band, while consuming only 9.4 mW.

KW - CMOS

KW - Low noise amplifier

KW - Low power

KW - Ultra-wideband

UR - http://www.scopus.com/inward/record.url?scp=34547352804&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2007.322807

DO - 10.1109/SMIC.2007.322807

M3 - 会议稿件

AN - SCOPUS:34547352804

SN - 0780397649

SN - 9780780397644

T3 - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

SP - 257

EP - 260

BT - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

T2 - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Y2 - 10 January 2007 through 12 January 2007

ER -

A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this