A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology

Jin Fa Chang; Yo Sheng Lin; Chi Chen Chen; Chang Zhi Chen; Tao Wang; Shey Shi Lu

doi:10.1109/RWS.2008.4463513

A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology

Jin Fa Chang^*
, Yo Sheng Lin
, Chi Chen Chen
, Chang Zhi Chen
, Tao Wang
, Shey Shi Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We demonstrate that miniature millimeter-wave (MMW) band-pass filter can be obtained by replacing the traditional coplanar waveguide structures with the miniature lumped-spiral inductors and metal-insulator-metal (MIM) capacitors. To study the substrate effects on the performances of the spiral inductor and filter, CMOS-compatible backside inductively-coupled-plasma (ICP) deep trench technology was used to selectively remove the silicon underneath them. The results show that a 70.9% (from 5.8 to 9.91) and a 298.7% (from 2.33 to 9.29) increase in Q-factor were achieved at 40 GHz and 60 GHz, respectively, for a 251.7 pH inductor after the ICP etching. In addition, a 0.9 dB (from -5.4 dB to -4.6 dB) improvement in peak insertion loss (S₂₁ was achieved for the miniature bandpass filter with 3-dB bandwidth of 47.7 GHz (18.4-66.1 GHz) after the ICP etching. The chip area of the miniature filter was only 206 μm × 106 μm excluding the test pads.

Original language	English
Title of host publication	2008 IEEE Radio and Wireless Symposium, RWS
Pages	399-402
Number of pages	4
DOIs	https://doi.org/10.1109/RWS.2008.4463513
State	Published - 2008
Externally published	Yes
Event	2008 IEEE Radio and Wireless Symposium, RWS - Orlando, FL, United States Duration: 22 01 2008 → 24 01 2008

Publication series

Name	2008 IEEE Radio and Wireless Symposium, RWS

Conference

Conference	2008 IEEE Radio and Wireless Symposium, RWS
Country/Territory	United States
City	Orlando, FL
Period	22/01/08 → 24/01/08

Keywords

CMOS
Filter
MMW
Micro-machined
Miniature

Access to Document

10.1109/RWS.2008.4463513

Cite this

@inproceedings{825ac479f5f14da4b6fdc31591aba089,

title = "A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology",

abstract = "We demonstrate that miniature millimeter-wave (MMW) band-pass filter can be obtained by replacing the traditional coplanar waveguide structures with the miniature lumped-spiral inductors and metal-insulator-metal (MIM) capacitors. To study the substrate effects on the performances of the spiral inductor and filter, CMOS-compatible backside inductively-coupled-plasma (ICP) deep trench technology was used to selectively remove the silicon underneath them. The results show that a 70.9\% (from 5.8 to 9.91) and a 298.7\% (from 2.33 to 9.29) increase in Q-factor were achieved at 40 GHz and 60 GHz, respectively, for a 251.7 pH inductor after the ICP etching. In addition, a 0.9 dB (from -5.4 dB to -4.6 dB) improvement in peak insertion loss (S21 was achieved for the miniature bandpass filter with 3-dB bandwidth of 47.7 GHz (18.4-66.1 GHz) after the ICP etching. The chip area of the miniature filter was only 206 μm × 106 μm excluding the test pads.",

keywords = "CMOS, Filter, MMW, Micro-machined, Miniature",

author = "Chang, \{Jin Fa\} and Lin, \{Yo Sheng\} and Chen, \{Chi Chen\} and Chen, \{Chang Zhi\} and Tao Wang and Lu, \{Shey Shi\}",

year = "2008",

doi = "10.1109/RWS.2008.4463513",

language = "英语",

isbn = "1424414636",

series = "2008 IEEE Radio and Wireless Symposium, RWS",

pages = "399--402",

booktitle = "2008 IEEE Radio and Wireless Symposium, RWS",

note = "2008 IEEE Radio and Wireless Symposium, RWS ; Conference date: 22-01-2008 Through 24-01-2008",

}

Chang, JF, Lin, YS, Chen, CC, Chen, CZ, Wang, T & Lu, SS 2008, A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology. in 2008 IEEE Radio and Wireless Symposium, RWS., 4463513, 2008 IEEE Radio and Wireless Symposium, RWS, pp. 399-402, 2008 IEEE Radio and Wireless Symposium, RWS, Orlando, FL, United States, 22/01/08. https://doi.org/10.1109/RWS.2008.4463513

A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology. / Chang, Jin Fa; Lin, Yo Sheng; Chen, Chi Chen et al.
2008 IEEE Radio and Wireless Symposium, RWS. 2008. p. 399-402 4463513 (2008 IEEE Radio and Wireless Symposium, RWS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology

AU - Chang, Jin Fa

AU - Lin, Yo Sheng

AU - Chen, Chi Chen

AU - Chen, Chang Zhi

AU - Wang, Tao

AU - Lu, Shey Shi

PY - 2008

Y1 - 2008

N2 - We demonstrate that miniature millimeter-wave (MMW) band-pass filter can be obtained by replacing the traditional coplanar waveguide structures with the miniature lumped-spiral inductors and metal-insulator-metal (MIM) capacitors. To study the substrate effects on the performances of the spiral inductor and filter, CMOS-compatible backside inductively-coupled-plasma (ICP) deep trench technology was used to selectively remove the silicon underneath them. The results show that a 70.9% (from 5.8 to 9.91) and a 298.7% (from 2.33 to 9.29) increase in Q-factor were achieved at 40 GHz and 60 GHz, respectively, for a 251.7 pH inductor after the ICP etching. In addition, a 0.9 dB (from -5.4 dB to -4.6 dB) improvement in peak insertion loss (S21 was achieved for the miniature bandpass filter with 3-dB bandwidth of 47.7 GHz (18.4-66.1 GHz) after the ICP etching. The chip area of the miniature filter was only 206 μm × 106 μm excluding the test pads.

AB - We demonstrate that miniature millimeter-wave (MMW) band-pass filter can be obtained by replacing the traditional coplanar waveguide structures with the miniature lumped-spiral inductors and metal-insulator-metal (MIM) capacitors. To study the substrate effects on the performances of the spiral inductor and filter, CMOS-compatible backside inductively-coupled-plasma (ICP) deep trench technology was used to selectively remove the silicon underneath them. The results show that a 70.9% (from 5.8 to 9.91) and a 298.7% (from 2.33 to 9.29) increase in Q-factor were achieved at 40 GHz and 60 GHz, respectively, for a 251.7 pH inductor after the ICP etching. In addition, a 0.9 dB (from -5.4 dB to -4.6 dB) improvement in peak insertion loss (S21 was achieved for the miniature bandpass filter with 3-dB bandwidth of 47.7 GHz (18.4-66.1 GHz) after the ICP etching. The chip area of the miniature filter was only 206 μm × 106 μm excluding the test pads.

KW - CMOS

KW - Filter

KW - MMW

KW - Micro-machined

KW - Miniature

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DO - 10.1109/RWS.2008.4463513

M3 - 会议稿件

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SN - 1424414636

SN - 9781424414635

T3 - 2008 IEEE Radio and Wireless Symposium, RWS

SP - 399

EP - 402

BT - 2008 IEEE Radio and Wireless Symposium, RWS

T2 - 2008 IEEE Radio and Wireless Symposium, RWS

Y2 - 22 January 2008 through 24 January 2008

ER -

A Miniature micro-machined millimeter-wave bandpass filter by CMOS compatible ICP deep-trench technology

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