A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Chia Shih Cheng; Yuan Jui Shih; Hsien Chin Chiu

doi:10.1016/j.sse.2005.12.018

A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Chia Shih Cheng, Yuan Jui Shih, Hsien Chin Chiu^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.

Original language	English
Pages (from-to)	254-258
Number of pages	5
Journal	Solid-State Electronics
Volume	50
Issue number	2
DOIs	https://doi.org/10.1016/j.sse.2005.12.018
State	Published - 02 2006

Keywords

Angelov
Depletion-mode
Enhancement-mode
Mode
pHEMT

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10.1016/j.sse.2005.12.018

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abstract = "A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.",

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author = "Cheng, {Chia Shih} and Shih, {Yuan Jui} and Chiu, {Hsien Chin}",

year = "2006",

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AU - Cheng, Chia Shih

AU - Shih, Yuan Jui

AU - Chiu, Hsien Chin

PY - 2006/2

Y1 - 2006/2

N2 - A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.

AB - A modified Angelov model for InGaP/InGaAs enhancement-mode (E-mode) and depletion-mode (D-mode) pHEMTs is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the Angelov model, by modifying the formula to have comprehensive bias-dependent descriptions for nonlinear behaviors of the devices. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation power performance up to the third-order inter-modulation product are demonstrated for E-mode and D-mode pHEMTs simultaneously, which confirm the validity of this model.

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KW - Enhancement-mode

KW - Mode

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SN - 0038-1101

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JO - Solid-State Electronics

JF - Solid-State Electronics

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ER -

A modified Angelov model for InGaP/InGaAs enhancement- and depletion-mode pHEMTs using symbolic defined device technology

Abstract

Keywords

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