A new method for deposition of cubic Ta diffusion barrier for Cu metallization

Z. L. Yuan; D. H. Zhang; C. Y. Li; K. Prasad; C. M. Tan; L. J. Tang

doi:10.1016/S0040-6090(03)00532-7

A new method for deposition of cubic Ta diffusion barrier for Cu metallization

Z. L. Yuan
, D. H. Zhang^*
, C. Y. Li
, K. Prasad
, C. M. Tan
, L. J. Tang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

43 Scopus citations

Abstract

We have deposited high-quality cubic α-Ta films by incorporating an Ar/N₂ Plasma pre-treatment process prior to the deposition of the Ta film. The α-Ta films have low resistivity of approximately 30.6 μΩcm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N₂ pre-treatment on the SiO₂ surface, plays a critical role on the nucleation in the initial stage and subsequent growth of α-Ta films. This method is reliable and could be easily applied to the ultralarge-scale integrated circuits.

Original language	English
Pages (from-to)	126-129
Number of pages	4
Journal	Thin Solid Films
Volume	434
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00532-7
State	Published - 23 06 2003
Externally published	Yes

Keywords

Amorphous layer
Copper metallization
Diffusion barrier
Plasma pre-treatment
α-Ta

Access to Document

10.1016/S0040-6090(03)00532-7

Cite this

@article{07ed320126f44cc0a0486c0b50ad3b92,

title = "A new method for deposition of cubic Ta diffusion barrier for Cu metallization",

abstract = "We have deposited high-quality cubic α-Ta films by incorporating an Ar/N2 Plasma pre-treatment process prior to the deposition of the Ta film. The α-Ta films have low resistivity of approximately 30.6 μΩcm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N2 pre-treatment on the SiO2 surface, plays a critical role on the nucleation in the initial stage and subsequent growth of α-Ta films. This method is reliable and could be easily applied to the ultralarge-scale integrated circuits.",

keywords = "Amorphous layer, Copper metallization, Diffusion barrier, Plasma pre-treatment, α-Ta",

author = "Yuan, \{Z. L.\} and Zhang, \{D. H.\} and Li, \{C. Y.\} and K. Prasad and Tan, \{C. M.\} and Tang, \{L. J.\}",

year = "2003",

month = jun,

day = "23",

doi = "10.1016/S0040-6090(03)00532-7",

language = "英语",

volume = "434",

pages = "126--129",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - A new method for deposition of cubic Ta diffusion barrier for Cu metallization

AU - Yuan, Z. L.

AU - Zhang, D. H.

AU - Li, C. Y.

AU - Prasad, K.

AU - Tan, C. M.

AU - Tang, L. J.

PY - 2003/6/23

Y1 - 2003/6/23

N2 - We have deposited high-quality cubic α-Ta films by incorporating an Ar/N2 Plasma pre-treatment process prior to the deposition of the Ta film. The α-Ta films have low resistivity of approximately 30.6 μΩcm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N2 pre-treatment on the SiO2 surface, plays a critical role on the nucleation in the initial stage and subsequent growth of α-Ta films. This method is reliable and could be easily applied to the ultralarge-scale integrated circuits.

AB - We have deposited high-quality cubic α-Ta films by incorporating an Ar/N2 Plasma pre-treatment process prior to the deposition of the Ta film. The α-Ta films have low resistivity of approximately 30.6 μΩcm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N2 pre-treatment on the SiO2 surface, plays a critical role on the nucleation in the initial stage and subsequent growth of α-Ta films. This method is reliable and could be easily applied to the ultralarge-scale integrated circuits.

KW - Amorphous layer

KW - Copper metallization

KW - Diffusion barrier

KW - Plasma pre-treatment

KW - α-Ta

UR - https://www.scopus.com/pages/publications/0037939731

U2 - 10.1016/S0040-6090(03)00532-7

DO - 10.1016/S0040-6090(03)00532-7

M3 - 文章

AN - SCOPUS:0037939731

SN - 0040-6090

VL - 434

SP - 126

EP - 129

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

A new method for deposition of cubic Ta diffusion barrier for Cu metallization

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this