A new rail-to-rail readout circuit of CMOS image sensor for low power applications

Hwang Cherng Chow*, J. B. Hsiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In order to enhance the performance of CMOS image sensor under lower supply voltage, a new rail-to-rail pixel readout architecture is proposed in this paper. Due to the new readout circuit, the enough input voltage swing under low supply voltage is achieved and guaranteed for correct successive signal processing. As a consequence, the ability of working under lower voltage using the same process is greatly improved. The layout size of each pixel is 17um×11.55um. The design of a 64×64 bits CMOS image sensor circuit has been completed. The proposed CMOS image sensor can extend its operating voltage from 3.3V even down to 1.8V for a 0.35um process. The total power dissipation is 0.528mW at 3.3V supply and down to 0.102mW at 1.8V

Original languageEnglish
Title of host publication2005 IEEE International 48th Midwest Symposium on Circuits and Systems, MWSCAS 2005
Pages1019-1022
Number of pages4
DOIs
StatePublished - 2005
Event2005 IEEE International 48th Midwest Symposium on Circuits and Systems, MWSCAS 2005 - Cincinnati, OH, United States
Duration: 07 08 200510 08 2005

Publication series

NameMidwest Symposium on Circuits and Systems
Volume2005
ISSN (Print)1548-3746

Conference

Conference2005 IEEE International 48th Midwest Symposium on Circuits and Systems, MWSCAS 2005
Country/TerritoryUnited States
CityCincinnati, OH
Period07/08/0510/08/05

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