A nonvolatile analog neural memory using floating-gate MOS transistors

Han Yang; Bing J. Sheu; Ji Chien Lee

doi:10.1007/BF00249249

A nonvolatile analog neural memory using floating-gate MOS transistors

Han Yang^*, Bing J. Sheu, Ji Chien Lee

^*Corresponding author for this work

University of Southern California

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

Simple floating-gate transistors fabricated by a conventional double-polysilicon process show excellent programming and charge-retention characteristics. A five-transistor synapse cell achieves 8-bit resolution and at least 6-bit accuracy for analog neural computation. It occupies 67 μm×73 μm in a 2-μm CMOS process and can retain charge accuracy for over 25 years.

Original language	English
Pages (from-to)	19-25
Number of pages	7
Journal	Analog Integrated Circuits and Signal Processing
Volume	2
Issue number	1
DOIs	https://doi.org/10.1007/BF00249249
State	Published - 02 1992
Externally published	Yes

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10.1007/BF00249249

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title = "A nonvolatile analog neural memory using floating-gate MOS transistors",

abstract = "Simple floating-gate transistors fabricated by a conventional double-polysilicon process show excellent programming and charge-retention characteristics. A five-transistor synapse cell achieves 8-bit resolution and at least 6-bit accuracy for analog neural computation. It occupies 67 μm×73 μm in a 2-μm CMOS process and can retain charge accuracy for over 25 years.",

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AB - Simple floating-gate transistors fabricated by a conventional double-polysilicon process show excellent programming and charge-retention characteristics. A five-transistor synapse cell achieves 8-bit resolution and at least 6-bit accuracy for analog neural computation. It occupies 67 μm×73 μm in a 2-μm CMOS process and can retain charge accuracy for over 25 years.

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A nonvolatile analog neural memory using floating-gate MOS transistors

Abstract

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