@inproceedings{78fa25ae296c42a296e279ca253e6808,
title = "A novel non-volatile memory cell using a gated-diode structure with a trapping-nitride storage layer",
abstract = "A novel trapping-nitride-based non-volatile memory cell by using a gated-diode structure is proposed. Fowler-Nordheim (FN) electron injection and band-to-band-tunneling induced hot-hole (BTBT HH) injection are utilized as the erase and program methods, respectively. BTBT current modulated by the trapped charges is the sensing signal to distinguish the cell's bit state. This cell structure overcomes the channel-length related drawbacks in convention field-effect-transistor (FET)-based cells. Furthermore, its array architecture and bias methods can relieve the complex word-line (WL) bias schemes and program-inhibit techniques used in NAND-type arrays. Good program/erase characteristics and reliability are also presented.",
keywords = "Band-to-band-tunneling current, Gated-diode, Trapped-charge non-volatile memory",
author = "Tsai, {W. J.} and Ou, {T. F.} and Kao, {H. L.} and Lat, {E. K.} and Liao, {Y. Y.} and Yeh, {C. C.} and Tahui Wang and Joseph Ku and Lu, {Chih Yuan}",
year = "2006",
language = "英语",
isbn = "1424400058",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "42--43",
booktitle = "2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers",
note = "2006 Symposium on VLSI Technology, VLSIT ; Conference date: 13-06-2006 Through 15-06-2006",
}