Abstract
In this letter, for the first time, a novel p-n-diode (PND) structure of SONOS-type thin-film transistor (TFT) nonvolatile memory (NVM) with embedded silicon nanocrystals (Si-NCs) in the silicon nitride layer using an in situ method is successfully demonstrated. This novel structure has many advantages, including high density and suitability for 3-D circuit integration. Hot-electron injection and hot-hole injection are used as the program and erase methods, respectively. The sensing current of the three-terminal PND-TFT NVM is 10 -7 A by the band-to-band tunneling current. A much larger memory window >12V) and good data retention time (108s for 12% charge loss) are exhibited. The device appears to have great potential for system-on-panel applications.
Original language | English |
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Article number | 5565385 |
Pages (from-to) | 1239-1241 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 31 |
Issue number | 11 |
DOIs | |
State | Published - 11 2010 |
Externally published | Yes |
Keywords
- Band-to-band tunneling (BTBT)
- nonvolatile memory (NVM)
- p-n diode (PND)
- silicon nanocrystal (Si-NC)
- thin-film transistor (TFT)