A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai; M. W. Ma; C. F. Cheng; Albert Chin; S. P. McAlister; C. X. Zhu; M. F. Li; D. L. Kwong

doi:10.1109/DRC.2004.1367791

A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai^*
, M. W. Ma
, C. F. Cheng
, Albert Chin
, S. P. McAlister
, C. X. Zhu
, M. F. Li
, D. L. Kwong

^*Corresponding author for this work

National Yang Ming Chiao Tung University
National Research Council of Canada
National University of Singapore
University of Texas at Austin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al₂O₃, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 10⁴s and shows potentially long memory time.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	77-78
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367791
State	Published - 2004
Externally published	Yes
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: 21 06 2004 → 23 06 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	21/06/04 → 23/06/04

Access to Document

10.1109/DRC.2004.1367791

Cite this

@inproceedings{f449a1ef5f4647a9aad294869001b801,

title = "A novel program-erasable capacitor using high-κ AlN dielectric",

abstract = "We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.",

author = "Lai, \{C. H.\} and Ma, \{M. W.\} and Cheng, \{C. F.\} and Albert Chin and McAlister, \{S. P.\} and Zhu, \{C. X.\} and Li, \{M. F.\} and Kwong, \{D. L.\}",

year = "2004",

doi = "10.1109/DRC.2004.1367791",

language = "英语",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "77--78",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Lai, CH, Ma, MW, Cheng, CF, Chin, A, McAlister, SP, Zhu, CX, Li, MF & Kwong, DL 2004, A novel program-erasable capacitor using high-κ AlN dielectric. in Device Research Conference - Conference Digest, 62nd DRC., III.-13, Device Research Conference - Conference Digest, DRC, pp. 77-78, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 21/06/04. https://doi.org/10.1109/DRC.2004.1367791

TY - GEN

T1 - A novel program-erasable capacitor using high-κ AlN dielectric

AU - Lai, C. H.

AU - Ma, M. W.

AU - Cheng, C. F.

AU - Chin, Albert

AU - McAlister, S. P.

AU - Zhu, C. X.

AU - Li, M. F.

AU - Kwong, D. L.

PY - 2004

Y1 - 2004

N2 - We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

AB - We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

UR - https://www.scopus.com/pages/publications/18044370451

U2 - 10.1109/DRC.2004.1367791

DO - 10.1109/DRC.2004.1367791

M3 - 会议稿件

AN - SCOPUS:18044370451

SN - 0780382846

T3 - Device Research Conference - Conference Digest, DRC

SP - 77

EP - 78

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

A novel program-erasable capacitor using high-κ AlN dielectric

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this