TY - GEN
T1 - A novel self-biased low noise amplifier with current-reused technique for X band applications
AU - Yang, Chin Lung
AU - Hsieh, Tsung Han
AU - Chiang, Yi Chyun
PY - 2009
Y1 - 2009
N2 - A low-noise amplifier (LNA) employing novel self-biased shunt-feedback mechanism for X band applications is presented. The shunt-shunt feedback impedance is not only used to eliminate the use of gate-biased voltage, but also neutralize the miller capacitor of the input transistor. With combining current-reused technique into the amplifier, it is benefit to boost power gain and maintain low power consumption. A source-degeneration inductor is also introduced at the input transistor to ensure good input matching and stability across the required bandwidth. A prototype was fabricated in 0.18-μm CMOS process to demonstrate the proposed LNA architecture. The measurements show that a maximum power gain of 10 dB, a minimum noise figure (NF) of 4.5 dB, -6 dBm input-referred third-order intercept point (IIP3), and drawing 7.6 mA from a 1.8-V supply.
AB - A low-noise amplifier (LNA) employing novel self-biased shunt-feedback mechanism for X band applications is presented. The shunt-shunt feedback impedance is not only used to eliminate the use of gate-biased voltage, but also neutralize the miller capacitor of the input transistor. With combining current-reused technique into the amplifier, it is benefit to boost power gain and maintain low power consumption. A source-degeneration inductor is also introduced at the input transistor to ensure good input matching and stability across the required bandwidth. A prototype was fabricated in 0.18-μm CMOS process to demonstrate the proposed LNA architecture. The measurements show that a maximum power gain of 10 dB, a minimum noise figure (NF) of 4.5 dB, -6 dBm input-referred third-order intercept point (IIP3), and drawing 7.6 mA from a 1.8-V supply.
KW - CMOS
KW - Current-reused technique
KW - Low Noise Amplifier (LNA)
KW - Shunt-feedback impedance
UR - https://www.scopus.com/pages/publications/77950682878
U2 - 10.1109/APMC.2009.5384321
DO - 10.1109/APMC.2009.5384321
M3 - 会议稿件
AN - SCOPUS:77950682878
SN - 9781424428021
T3 - APMC 2009 - Asia Pacific Microwave Conference 2009
SP - 1667
EP - 1670
BT - APMC 2009 - Asia Pacific Microwave Conference 2009
T2 - Asia Pacific Microwave Conference 2009, APMC 2009
Y2 - 7 December 2009 through 10 December 2009
ER -