A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

C. C. Yeh; W. J. Tsai; T. C. Lu; Y. R. Chen; F. M. Pan; S. H. Gu; Y. Y. Liao; H. L. Kao; T. F. Ou; N. K. Zous; Wen Chi Ting; Tahui Wang; Joseph Ku; Chih Yuan Lu

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

C. C. Yeh^*, W. J. Tsai, T. C. Lu, Y. R. Chen, F. M. Pan, S. H. Gu, Y. Y. Liao, H. L. Kao, T. F. Ou, N. K. Zous, Wen Chi Ting, Tahui Wang, Joseph Ku, Chih Yuan Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm² is demonstrated for display and optical communication purposes.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	1013-1016
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 05 12 2005 → 07 12 2005

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Conference

Conference	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/05 → 07/12/05

Cite this

Yeh, C. C., Tsai, W. J., Lu, T. C., Chen, Y. R., Pan, F. M., Gu, S. H., Liao, Y. Y., Kao, H. L., Ou, T. F., Zous, N. K., Ting, W. C., Wang, T., Ku, J., & Lu, C. Y. (2005). A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 1013-1016). Article 1609535 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Yeh, C. C. ; Tsai, W. J. ; Lu, T. C. et al. / A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) : Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 1013-1016 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{aa57355d33744314807f3d27423e442a,

title = "A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI",

abstract = "A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm2 is demonstrated for display and optical communication purposes.",

author = "Yeh, {C. C.} and Tsai, {W. J.} and Lu, {T. C.} and Chen, {Y. R.} and Pan, {F. M.} and Gu, {S. H.} and Liao, {Y. Y.} and Kao, {H. L.} and Ou, {T. F.} and Zous, {N. K.} and Ting, {Wen Chi} and Tahui Wang and Joseph Ku and Lu, {Chih Yuan}",

year = "2005",

language = "英语",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "1013--1016",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

note = "IEEE International Electron Devices Meeting, 2005 IEDM ; Conference date: 05-12-2005 Through 07-12-2005",

}

Yeh, CC, Tsai, WJ, Lu, TC, Chen, YR, Pan, FM, Gu, SH, Liao, YY, Kao, HL, Ou, TF, Zous, NK, Ting, WC, Wang, T, Ku, J & Lu, CY 2005, A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609535, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 1013-1016, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/05.

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI. / Yeh, C. C.; Tsai, W. J.; Lu, T. C. et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 1013-1016 1609535 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET)

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

AU - Yeh, C. C.

AU - Tsai, W. J.

AU - Lu, T. C.

AU - Chen, Y. R.

AU - Pan, F. M.

AU - Gu, S. H.

AU - Liao, Y. Y.

AU - Kao, H. L.

AU - Ou, T. F.

AU - Zous, N. K.

AU - Ting, Wen Chi

AU - Wang, Tahui

AU - Ku, Joseph

AU - Lu, Chih Yuan

PY - 2005

Y1 - 2005

N2 - A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm2 is demonstrated for display and optical communication purposes.

AB - A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm2 is demonstrated for display and optical communication purposes.

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M3 - 会议稿件

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SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 1013

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BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

Y2 - 5 December 2005 through 7 December 2005

ER -

Yeh CC, Tsai WJ, Lu TC, Chen YR, Pan FM, Gu SH et al. A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 1013-1016. 1609535. (Technical Digest - International Electron Devices Meeting, IEDM).

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

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