A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen; Hou Yu Chen; Chia Yi Lin; Chuan Mei Tsai; Chung Fan Hsieh; Jim Tong Horng; Jian Tai Qiu; Chien Chao Huang; Fu Liang Yang

doi:10.1109/IEDM.2010.5703485

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

Min Cheng Chen^*, Hou Yu Chen, Chia Yi Lin, Chuan Mei Tsai, Chung Fan Hsieh, Jim Tong Horng, Jian Tai Qiu, Chien Chao Huang, Fu Liang Yang

^*Corresponding author for this work

National Nano Device Laboratories Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically V_th-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V ^th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically V^th adjustment (V^th programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	36.2.1-36.2.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703485
State	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 06 12 2010 → 08 12 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	06/12/10 → 08/12/10

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10.1109/IEDM.2010.5703485

Cite this

Chen, M. C., Chen, H. Y., Lin, C. Y., Tsai, C. M., Hsieh, C. F., Horng, J. T., Qiu, J. T., Huang, C. C., & Yang, F. L. (2010). A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 36.2.1-36.2.4). Article 5703485 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703485

@inproceedings{b94c6eccfb2c4107ba9ed0fab6eca704,

title = "A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology",

abstract = "For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.",

author = "Chen, {Min Cheng} and Chen, {Hou Yu} and Lin, {Chia Yi} and Tsai, {Chuan Mei} and Hsieh, {Chung Fan} and Horng, {Jim Tong} and Qiu, {Jian Tai} and Huang, {Chien Chao} and Yang, {Fu Liang}",

year = "2010",

doi = "10.1109/IEDM.2010.5703485",

language = "英语",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "36.2.1--36.2.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Chen, MC, Chen, HY, Lin, CY, Tsai, CM, Hsieh, CF , Horng, JT, Qiu, JT, Huang, CC & Yang, FL 2010, A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703485, Technical Digest - International Electron Devices Meeting, IEDM, pp. 36.2.1-36.2.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2010.5703485

A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology. / Chen, Min Cheng; Chen, Hou Yu; Lin, Chia Yi et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 36.2.1-36.2.4 5703485 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsieh, Chung Fan

AU - Horng, Jim Tong

AU - Qiu, Jian Tai

AU - Huang, Chien Chao

AU - Yang, Fu Liang

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AB - For the first time, a novel smart biosensor with hybrid sensor/memory/CMOS poly-Si nanowire technology has been developed. Special designed oxide-nitride-oxide composite dielectric underneath 50nm nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. The detections of pH, hydrogen peroxide and DNA are demonstrated using various functionalized receptors. A substrate-ionic coupling operation of the buried-channel field-effect sensor exhibits superior pH sensitivity (V th shift > 100mV/pH) beyond Nernst limitation. The built-in memory of nanowire devices possess steady electrically Vth adjustment (Vth programming/erasing window > 2V), enable portable physiology monitoring and in-situ recording. In this work, we report a fully CMOS-compatible technique for Lab-on-Chip biosensor application.

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A novel smart nanowire biosensor with hybrid sensor/memory/CMOS technology

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