A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier

Wen Jer Tsai*, Tien Fan Ou, Hsuan Ling Kao, Erh Kun Lai, Jyun Siang Huang, Lit Ho Chong, Yi Ying Liao, Shih Ping Hong, Ming Tsung Wu, Shih Chang Tsai, Chia Hao Leng, Fang Hao Hsu, Szu Yu Wang, Chun Ming Cheng, Tuung Luoh, Yung Tai Hung, Shing Ann Luo, Chih Hao Huang, Tao Cheng Lu, Tahone YangKuang Chao Chen, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.

Original languageEnglish
Pages (from-to)2202-2211
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
StatePublished - 2008

Keywords

  • Band-edge offset
  • Bandgap engineering
  • Bandto-band tunneling (BTBT)
  • Direct tunneling (DT)
  • Dopant diffusion barrier
  • Gated diode
  • Heterojunction
  • Nonvolatile memory (NVM)
  • Trapped-charge storage

Fingerprint

Dive into the research topics of 'A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier'. Together they form a unique fingerprint.

Cite this