Abstract
A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.
Original language | English |
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Pages (from-to) | 2202-2211 |
Number of pages | 10 |
Journal | IEEE Transactions on Electron Devices |
Volume | 55 |
Issue number | 8 |
DOIs | |
State | Published - 2008 |
Keywords
- Band-edge offset
- Bandgap engineering
- Bandto-band tunneling (BTBT)
- Direct tunneling (DT)
- Dopant diffusion barrier
- Gated diode
- Heterojunction
- Nonvolatile memory (NVM)
- Trapped-charge storage