A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier

Wen Jer Tsai; Tien Fan Ou; Hsuan Ling Kao; Erh Kun Lai; Jyun Siang Huang; Lit Ho Chong; Yi Ying Liao; Shih Ping Hong; Ming Tsung Wu; Shih Chang Tsai; Chia Hao Leng; Fang Hao Hsu; Szu Yu Wang; Chun Ming Cheng; Tuung Luoh; Yung Tai Hung; Shing Ann Luo; Chih Hao Huang; Tao Cheng Lu; Tahone Yang; Kuang Chao Chen; Chih Yuan Lu

doi:10.1109/TED.2008.926576

A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier

Wen Jer Tsai^*
, Tien Fan Ou
, Hsuan Ling Kao
, Erh Kun Lai
, Jyun Siang Huang
, Lit Ho Chong
, Yi Ying Liao
, Shih Ping Hong
, Ming Tsung Wu
, Shih Chang Tsai
, Chia Hao Leng
, Fang Hao Hsu
, Szu Yu Wang
, Chun Ming Cheng
, Tuung Luoh
, Yung Tai Hung
, Shing Ann Luo
, Chih Hao Huang
, Tao Cheng Lu
, Tahone Yang

Kuang Chao Chen, Chih Yuan Lu

^*Corresponding author for this work

Department of Electronic Engineering

Macronix International Co., Ltd. Taiwan

Research output: Contribution to journal › Journal Article › peer-review

Abstract

A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.

Original language	English
Pages (from-to)	2202-2211
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	8
DOIs	https://doi.org/10.1109/TED.2008.926576
State	Published - 2008

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Band-edge offset
Bandgap engineering
Bandto-band tunneling (BTBT)
Direct tunneling (DT)
Dopant diffusion barrier
Gated diode
Heterojunction
Nonvolatile memory (NVM)
Trapped-charge storage

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10.1109/TED.2008.926576

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Tsai, W. J., Ou, T. F., Kao, H. L., Lai, E. K., Huang, J. S., Chong, L. H., Liao, Y. Y., Hong, S. P., Wu, M. T., Tsai, S. C., Leng, C. H., Hsu, F. H., Wang, S. Y., Cheng, C. M., Luoh, T., Hung, Y. T., Luo, S. A., Huang, C. H., Lu, T. C., ... Lu, C. Y. (2008). A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier. IEEE Transactions on Electron Devices, 55(8), 2202-2211. https://doi.org/10.1109/TED.2008.926576

@article{631280dfe68a42a790a1b9fcba280544,

title = "A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier",

abstract = "A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.",

keywords = "Band-edge offset, Bandgap engineering, Bandto-band tunneling (BTBT), Direct tunneling (DT), Dopant diffusion barrier, Gated diode, Heterojunction, Nonvolatile memory (NVM), Trapped-charge storage",

author = "Tsai, \{Wen Jer\} and Ou, \{Tien Fan\} and Kao, \{Hsuan Ling\} and Lai, \{Erh Kun\} and Huang, \{Jyun Siang\} and Chong, \{Lit Ho\} and Liao, \{Yi Ying\} and Hong, \{Shih Ping\} and Wu, \{Ming Tsung\} and Tsai, \{Shih Chang\} and Leng, \{Chia Hao\} and Hsu, \{Fang Hao\} and Wang, \{Szu Yu\} and Cheng, \{Chun Ming\} and Tuung Luoh and Hung, \{Yung Tai\} and Luo, \{Shing Ann\} and Huang, \{Chih Hao\} and Lu, \{Tao Cheng\} and Tahone Yang and Chen, \{Kuang Chao\} and Lu, \{Chih Yuan\}",

year = "2008",

doi = "10.1109/TED.2008.926576",

language = "英语",

volume = "55",

pages = "2202--2211",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Tsai, WJ, Ou, TF, Kao, HL, Lai, EK, Huang, JS, Chong, LH, Liao, YY, Hong, SP, Wu, MT, Tsai, SC, Leng, CH, Hsu, FH, Wang, SY, Cheng, CM, Luoh, T, Hung, YT, Luo, SA, Huang, CH, Lu, TC, Yang, T, Chen, KC & Lu, CY 2008, 'A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier', IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 2202-2211. https://doi.org/10.1109/TED.2008.926576

TY - JOUR

T1 - A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier

AU - Tsai, Wen Jer

AU - Ou, Tien Fan

AU - Kao, Hsuan Ling

AU - Lai, Erh Kun

AU - Huang, Jyun Siang

AU - Chong, Lit Ho

AU - Liao, Yi Ying

AU - Hong, Shih Ping

AU - Wu, Ming Tsung

AU - Tsai, Shih Chang

AU - Leng, Chia Hao

AU - Hsu, Fang Hao

AU - Wang, Szu Yu

AU - Cheng, Chun Ming

AU - Luoh, Tuung

AU - Hung, Yung Tai

AU - Luo, Shing Ann

AU - Huang, Chih Hao

AU - Lu, Tao Cheng

AU - Yang, Tahone

AU - Chen, Kuang Chao

AU - Lu, Chih Yuan

PY - 2008

Y1 - 2008

N2 - A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.

AB - A novel trapping-nitride-storage nonvolatile memory cell by using a gated-diode structure is proposed. An ultrathin nitride layer is introduced between the n-type and p-type regions of the diode. This layer acts as a dopant diffusion barrier that well defines the junction location. Meanwhile, it is thin enough that charge carriers can flow through it via direct tunneling at low field as being sensed. Good program/erase characteristics and acceptable reliability are presented. Finally, using a low-bandgap material to enhance the sensing current is suggested along with the preferred device structure.

KW - Band-edge offset

KW - Bandgap engineering

KW - Bandto-band tunneling (BTBT)

KW - Direct tunneling (DT)

KW - Dopant diffusion barrier

KW - Gated diode

KW - Heterojunction

KW - Nonvolatile memory (NVM)

KW - Trapped-charge storage

UR - https://www.scopus.com/pages/publications/49249099760

U2 - 10.1109/TED.2008.926576

DO - 10.1109/TED.2008.926576

M3 - 文章

AN - SCOPUS:49249099760

SN - 0018-9383

VL - 55

SP - 2202

EP - 2211

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

A novel trapping-nitride-storage non-volatile memory cell using a gated-diode structure with an ultrathin dielectric dopant diffusion barrier

Abstract

UN SDGs

Keywords

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