A power amplifier MMIC using CPW structure technology

Chia Song Wu*, Hsien Chin Chiu

*Corresponding author for this work

Research output: Contribution to specialist publicationSpecialist publication Article

4 Scopus citations

Abstract

This article presents the performance of a two-stage X-/Ku-band microwave monolithic integrated circuit (MMIC) power amplifier using a 0.15 μm gate length InGaP/InGaAs E-mode pseudomorphic high electron mobility transistor (PHEMT) and a coplanar waveguide (CPW) topology. The power amplifier, with a chip size of 2.3 × 0.87 mm, gave an output power of 20 dBm and a power gain in excess of 20 dB. The input third-order intercept point (IIP3) is 1.4 dBm and the output third-order intercept point (OIP3) is 24.5 dBm. The overall power characteristic exhibits high gain and linearity, which illustrates that the power amplifier is compact and exhibits favorable RF characteristics in the X-/Ku-band.

Original languageEnglish
Pages112-124
Number of pages13
Volume50
No11
Specialist publicationMicrowave Journal
StatePublished - 11 2007

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