A reliable and high voltage compatible CMOS I/O buffer

Hwang Cherng Chow; You Gang Chen

A reliable and high voltage compatible CMOS I/O buffer

Hwang Cherng Chow^*, You Gang Chen

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A high voltage tolerant and reliable CMOS I/O buffer without using thick-oxide devices is presented. By the floating N-WELL technique, the proposed design has a simpler structure and the good gate-oxide reliability is achieved. In addition, it is dc leakage free and has no redundant pad for dual powers. From the simulation results, the proposed circuit can demonstrate both speed enhancement about 20% in pull-up operation and 50% saving in area. Therefore, the proposed I/O buffer is very suitable for mixed voltage interface applications.

Original language	English
Pages (from-to)	III451-III454
Journal	Midwest Symposium on Circuits and Systems
Volume	3
State	Published - 2004
Event	The 2004 47th Midwest Symposium on Circuits and Systems - Conference Proceedings - Hiroshima, Japan Duration: 25 07 2004 → 28 07 2004

Cite this

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title = "A reliable and high voltage compatible CMOS I/O buffer",

abstract = "A high voltage tolerant and reliable CMOS I/O buffer without using thick-oxide devices is presented. By the floating N-WELL technique, the proposed design has a simpler structure and the good gate-oxide reliability is achieved. In addition, it is dc leakage free and has no redundant pad for dual powers. From the simulation results, the proposed circuit can demonstrate both speed enhancement about 20% in pull-up operation and 50% saving in area. Therefore, the proposed I/O buffer is very suitable for mixed voltage interface applications.",

author = "Chow, {Hwang Cherng} and Chen, {You Gang}",

year = "2004",

language = "英语",

volume = "3",

pages = "III451--III454",

journal = "Midwest Symposium on Circuits and Systems",

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note = "The 2004 47th Midwest Symposium on Circuits and Systems - Conference Proceedings ; Conference date: 25-07-2004 Through 28-07-2004",

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AU - Chow, Hwang Cherng

AU - Chen, You Gang

PY - 2004

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N2 - A high voltage tolerant and reliable CMOS I/O buffer without using thick-oxide devices is presented. By the floating N-WELL technique, the proposed design has a simpler structure and the good gate-oxide reliability is achieved. In addition, it is dc leakage free and has no redundant pad for dual powers. From the simulation results, the proposed circuit can demonstrate both speed enhancement about 20% in pull-up operation and 50% saving in area. Therefore, the proposed I/O buffer is very suitable for mixed voltage interface applications.

AB - A high voltage tolerant and reliable CMOS I/O buffer without using thick-oxide devices is presented. By the floating N-WELL technique, the proposed design has a simpler structure and the good gate-oxide reliability is achieved. In addition, it is dc leakage free and has no redundant pad for dual powers. From the simulation results, the proposed circuit can demonstrate both speed enhancement about 20% in pull-up operation and 50% saving in area. Therefore, the proposed I/O buffer is very suitable for mixed voltage interface applications.

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M3 - 会议文章

AN - SCOPUS:11144276577

SN - 1548-3746

VL - 3

SP - III451-III454

JO - Midwest Symposium on Circuits and Systems

JF - Midwest Symposium on Circuits and Systems

T2 - The 2004 47th Midwest Symposium on Circuits and Systems - Conference Proceedings

Y2 - 25 July 2004 through 28 July 2004

ER -

A reliable and high voltage compatible CMOS I/O buffer

Abstract

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