A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan I. Ho; Mohamed Boutchich; Ching Yuan Su; Rosalia Moreddu; Eugene Sebastian Raj Marianathan; Laurent Montes; Chao Sung Lai

doi:10.1002/adma.201502544

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan I. Ho, Mohamed Boutchich^*, Ching Yuan Su, Rosalia Moreddu, Eugene Sebastian Raj Marianathan, Laurent Montes, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

47 Scopus citations

Abstract

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

Original language	English
Pages (from-to)	6519-6525
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	41
DOIs	https://doi.org/10.1002/adma.201502544
State	Published - 01 11 2015

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

field-effect transistors
fluorographene
graphene
scattering
self-aligned

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10.1002/adma.201502544

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AU - Su, Ching Yuan

AU - Moreddu, Rosalia

AU - Marianathan, Eugene Sebastian Raj

AU - Montes, Laurent

AU - Lai, Chao Sung

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AB - The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

KW - field-effect transistors

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A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Abstract

Bibliographical note

Keywords

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