A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan I. Ho; Mohamed Boutchich; Ching Yuan Su; Rosalia Moreddu; Eugene Sebastian Raj Marianathan; Laurent Montes; Chao Sung Lai

doi:10.1002/adma.201502544

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Kuan I. Ho
, Mohamed Boutchich^*
, Ching Yuan Su
, Rosalia Moreddu
, Eugene Sebastian Raj Marianathan
, Laurent Montes
, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

49 Scopus citations

Abstract

The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

Original language	English
Pages (from-to)	6519-6525
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	41
DOIs	https://doi.org/10.1002/adma.201502544
State	Published - 01 11 2015

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

field-effect transistors
fluorographene
graphene
scattering
self-aligned

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10.1002/adma.201502544

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title = "A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering",

abstract = "The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.",

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author = "Ho, \{Kuan I.\} and Mohamed Boutchich and Su, \{Ching Yuan\} and Rosalia Moreddu and Marianathan, \{Eugene Sebastian Raj\} and Laurent Montes and Lai, \{Chao Sung\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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T2 - Decoupling the Channel with Fluorographene to Reduce Scattering

AU - Ho, Kuan I.

AU - Boutchich, Mohamed

AU - Su, Ching Yuan

AU - Moreddu, Rosalia

AU - Marianathan, Eugene Sebastian Raj

AU - Montes, Laurent

AU - Lai, Chao Sung

PY - 2015/11/1

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AB - The conduction channel of a graphene field-effect transistor (FET) is decoupled from the parasitic charge impurities of the underlying substrate. Fluorographene as a passivation layer is fabricated between the oxide substrate and channel, and a self-aligned gate-terminated FET is also fabricated. This approach significantly reduces the scattering and, as a result, the mobility increases ten fold.

KW - field-effect transistors

KW - fluorographene

KW - graphene

KW - scattering

KW - self-aligned

UR - https://www.scopus.com/pages/publications/84946062335

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DO - 10.1002/adma.201502544

M3 - 文章

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SN - 0935-9648

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JF - Advanced Materials

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ER -

A Self-Aligned High-Mobility Graphene Transistor: Decoupling the Channel with Fluorographene to Reduce Scattering

Abstract

Bibliographical note

Keywords

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