A simple drain current model for MOS transistors with the Lorentz force effect

Hwang Cherng Chow, Prasenjit Chatterjee*, Wu Shiung Feng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

4 Scopus citations


A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop around the device, and the relation between the applied loop current and the created magnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced with the applied Lorentz force from both directions. This change in the drain current is ascribed to a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is observed. To model this change, a set of novel drain current equations, under the Lorentz force, for the strong inversion region has been proposed. A satisfactory agreement of an average error of less than 2% between the measured and the calculated drain currents under the magnetic field created by an on-chip metal loop is achieved.

Original languageEnglish
Article number1199
Issue number6
StatePublished - 06 2017

Bibliographical note

Publisher Copyright:
© 2017 by the authors. Licensee MDPI, Basel, Switzerland.


  • Hall effect
  • Lorentz force
  • MagFET
  • Magnetic sensor


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