A stochastic simulation method for the assessment of resistive random access memory retention reliability

Dan Berco; Tseung Yuen Tseng

doi:10.1063/1.4938210

A stochastic simulation method for the assessment of resistive random access memory retention reliability

Dan Berco, Tseung Yuen Tseng

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO₂ device with a double layer ZnO/ZrO₂ one, and obtain results which are in good agreement with experimental data.

Original language	English
Article number	253504
Journal	Applied Physics Letters
Volume	107
Issue number	25
DOIs	https://doi.org/10.1063/1.4938210
State	Published - 21 12 2015
Externally published	Yes

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© 2015 AIP Publishing LLC.

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abstract = "This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data.",

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AB - This study presents an evaluation method for resistive random access memory retention reliability based on the Metropolis Monte Carlo algorithm and Gibbs free energy. The method, which does not rely on a time evolution, provides an extremely efficient way to compare the relative retention properties of metal-insulator-metal structures. It requires a small number of iterations and may be used for statistical analysis. The presented approach is used to compare the relative robustness of a single layer ZrO2 device with a double layer ZnO/ZrO2 one, and obtain results which are in good agreement with experimental data.

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A stochastic simulation method for the assessment of resistive random access memory retention reliability

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