TY - JOUR
T1 - A study of the Growth‐Temperature‐dependent Surface Morphology in InSb Liquid Phase Epitaxy
AU - Chang, L. B.
PY - 1991
Y1 - 1991
N2 - InSb LPE layers were grown on (111) InSb substrates, their phase diagram and growth rates studied. The InSb activity coefficient α(T), determined by fitting the experimental data, had a value of 2556–11.11 · T cal · mole−1. The terraces on the surface were reduced by increasing the temperature to 350 °C. Hall measurements of InSb/CdTe heterostructure failed due to the high Te segregation. The carrier concentration of these InSb epilayers, however, was determined by C‐V measurements with values between 7.5 · 1014 cm−3 and 5 · 1015 cm−3.
AB - InSb LPE layers were grown on (111) InSb substrates, their phase diagram and growth rates studied. The InSb activity coefficient α(T), determined by fitting the experimental data, had a value of 2556–11.11 · T cal · mole−1. The terraces on the surface were reduced by increasing the temperature to 350 °C. Hall measurements of InSb/CdTe heterostructure failed due to the high Te segregation. The carrier concentration of these InSb epilayers, however, was determined by C‐V measurements with values between 7.5 · 1014 cm−3 and 5 · 1015 cm−3.
UR - http://www.scopus.com/inward/record.url?scp=84985756757&partnerID=8YFLogxK
U2 - 10.1002/crat.2170260211
DO - 10.1002/crat.2170260211
M3 - 文章
AN - SCOPUS:84985756757
SN - 0232-1300
VL - 26
SP - 187
EP - 192
JO - Crystal Research and Technology
JF - Crystal Research and Technology
IS - 2
ER -