A study on the effects of two reactive gases in the reactive sputtering process

Chuan Li*, J. H. Hsieh, Jui Ching Cheng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

A mathematical model for reactive sputtering with multiple gases is established. Several non-dimensional parameters were identified with their physical significance and then the governing equations were cast in a non-dimensional form. For an illustration, a two-reactive gas system is used for study. Results show that the stability is characterized by the well-known hysteresis loop in the steady state solutions. Through parameter analysis, we found when the ion fluxes intensified, the range of hysteresis loops were enlarged and shifted to higher inflow rates. Moreover, when the chemical reactions dominate either on target or substrate, the steady state can be totally stable without hysteresis. Pumping speed also controls the process stability. At high pumping speed, excessive reactive gas is less likely to present in the chamber, leading to the extinction of hysteresis loops.

Original languageEnglish
Pages (from-to)168-172
Number of pages5
JournalThin Solid Films
Volume506-507
DOIs
StatePublished - 26 05 2006

Keywords

  • PVD
  • Plasma
  • Reactive sputtering
  • Stability analysis

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