@inproceedings{0daf3a4135f44a32ad60dddf484ecb63,
title = "A two-step electrical degradation behavior in α-InGaZnO thin-film transistor",
abstract = "In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (α-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of α-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the α-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.",
author = "Pan, {Tung Ming} and Chen, {Fa Hsyang} and Chen, {Ching Hung} and Lin, {Ching Chang} and Chieh Cheng and Ko, {Fu Hsiang} and Lin, {Wu Hsiung} and Chen, {Po Hsueh} and Her, {Jim Long} and Matsud, {Yasuhiro H.}",
year = "2013",
doi = "10.1149/05807.0299ecst",
language = "英语",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "299--302",
booktitle = "ECS Transactions",
edition = "7",
}