A unified submicrometer MOS transistor charge/capacitance model for mixed-signal IC's

Steve H. Jen*, Bing J. Sheu, Yoondong Park

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

A unified modeling approach for the submicrometer MOS transistor charge/capacitance characteristics in all operation regions is presented. Development of this MOS charge model is based on the charge-density approximation to reduce the complexity of the analytical expression. To model the charge density more accurately, the conductance-degradation coefficient is determined by the derivative of drain-to-source saturation voltage with respect to gate-to-channel potential. The unified charge densities in gate, channel, and bulk regions are obtained with the assistance of the sigmoid, hyperbola, and exponential interpolation techniques. Good agreement between the measurement data and simulation results is obtained.

Original languageEnglish
Pages (from-to)103-106
Number of pages4
JournalIEEE Journal of Solid-State Circuits
Volume34
Issue number1
DOIs
StatePublished - 01 1999
Externally publishedYes

Keywords

  • Analog circuit
  • Capacitance
  • Charge
  • Circuit model
  • Integrated circuit
  • Silicon technology

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