A V-band CMOS injection-locked oscillator using fundamental harmonic injection

Fan Hsiu Huang*, Yi Jen Chan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

9 Scopus citations

Abstract

A V-band CMOS injection-locked oscillator (ILO) based on a cross-coupled oscillator configuration containing nMOS and pMOS devices is implemented by using 0.18 μm CMOS process. This ILO has a free-running output frequency around 60 GHz while the double push-push technique was used as a frequency multiplier. It also has a wide output locking bandwidth of up to 3.64 GHz (from 59.36 to 63 GHz) as injecting a signal near 15 GHz with the fundamental injection-locked behavior. Controlling the output frequencies by the injected signals, the output signal has a phase noise of -108 dBc/Hz at a 1 MHz offset with consuming only 9.8 mW dc power under a 2 V supply.

Original languageEnglish
Pages (from-to)882-884
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number12
DOIs
StatePublished - 12 2007
Externally publishedYes

Keywords

  • 0.18 μm CMOS process
  • Push-push technique
  • V-band injection-locked oscillator (ILO)

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