Abstract
A V-band CMOS injection-locked oscillator (ILO) based on a cross-coupled oscillator configuration containing nMOS and pMOS devices is implemented by using 0.18 μm CMOS process. This ILO has a free-running output frequency around 60 GHz while the double push-push technique was used as a frequency multiplier. It also has a wide output locking bandwidth of up to 3.64 GHz (from 59.36 to 63 GHz) as injecting a signal near 15 GHz with the fundamental injection-locked behavior. Controlling the output frequencies by the injected signals, the output signal has a phase noise of -108 dBc/Hz at a 1 MHz offset with consuming only 9.8 mW dc power under a 2 V supply.
| Original language | English |
|---|---|
| Pages (from-to) | 882-884 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 17 |
| Issue number | 12 |
| DOIs | |
| State | Published - 12 2007 |
| Externally published | Yes |
Keywords
- 0.18 μm CMOS process
- Push-push technique
- V-band injection-locked oscillator (ILO)
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