Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Steve Hung Min Jen*, Christian C. Enz, David R. Pehlke, Michael Schröter, Bing J. Sheu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

122 Scopus citations

Abstract

Accurate modeling and efficient parameter extraction of the small signal equivalent circuit of submicrometer MOS transistors for high-frequency operation are presented. The equivalent circuit is based on a quasi-static approximation which was found to be adequate in the gigahertz range if the extrinsic components are properly modeled. It includes the complete intrinsic quasi-static MOS model, the series resistances of gate, source, and drain, and a substrate coupling network. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. The extracted results are physically meaningful and can be used to "de-embed" the extrinsic effects such as the substrate coupling within the device. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz.

Original languageEnglish
Pages (from-to)2217-2227
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume46
Issue number11
DOIs
StatePublished - 11 1999
Externally publishedYes

Keywords

  • CMOS
  • De-embed, modeling
  • Parameter extraction
  • Parameter measurement
  • RF
  • Small-signal equivalent circuit

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