@inproceedings{b2eaa062f7ba48bbab16f03a77ddcfe5,
title = "Accurate MOS transistor modeling and parameter extraction valid up to 10 GHz",
abstract = "Accurate modeling and efficient parameter extraction of the small signal equivalent circuit of MOS transistors for high-frequency operation are presented. The equivalent circuit is based on a quasi-static ,approximation which was found to be adequate up to 10 GHz for a 20-GHz fT MOS transistor, if the extrinsic components and substrate coupling effects are properly included. Direct extraction is performed by y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz.",
author = "Jen, \{Steve H.\} and Christian Enz and Pehlke, \{David R.\} and Michael Schroter and Sheu, \{Bing J.\}",
year = "1998",
language = "英语",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "484--487",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "美国",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}