Activation and deactivation of phosphorus in silicon-on-insulator substrates

Ruey Dar Chang*, Chih Hung Lin

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

12 Scopus citations

Abstract

Phosphorus that had been implanted into silicon-on-insulator (SOI) substrates was activated using different annealing techniques to investigate phosphorus deactivation at low temperatures. A combination of amorphization and excimer laser annealing (ELA) greatly enhanced phosphorus activation. However, heavy doping with phosphorus reduced the thickness of the amorphous layer. Furnace annealing at 350 °C following ELA induced significant deactivation and the deactivation behavior was similar to that following rapid thermal annealing (RTA). The temperature-dependence of phosphorus deactivation in samples that were implanted with a dose of 5×1016 cm-2 showed a transition at 400 °C. The deactivation behavior was more sensitive to temperature below 400 °C than above it. Samples with an implantation dose of 5×1015 cm-2 exhibited only a weak temperature-dependence of deactivation at temperatures above 400 °C, implying that the transition of temperature-dependence is caused by the change of the deactivation mechanism with the phosphorus activation level.

Original languageEnglish
Pages (from-to)219-222
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume42
DOIs
StatePublished - 01 02 2016

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.

Keywords

  • Activation
  • Deactivation
  • Excimer laser annealing
  • Phosphorus
  • Silicon-on-insulator

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