Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n+-p structures

Jenn Fang Chen; Jin Shung Wang; Pai Yong Wang; Nie Chuan Chen; Nian Ching Hsu

doi:10.1143/JJAP.39.227

Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n⁺-p structures

Jenn Fang Chen
, Jin Shung Wang
, Pai Yong Wang
, Nie Chuan Chen
, Nian Ching Hsu

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n⁺-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at E_a = 0.52 eV with a capture cross section 1.6 × 10^-14 cm² is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.

Original language	English
Pages (from-to)	227-230
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.39.227
State	Published - 01 2000
Externally published	Yes

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title = "Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n+-p structures",

abstract = "Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at Ea = 0.52 eV with a capture cross section 1.6 × 10-14 cm2 is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.",

author = "Chen, \{Jenn Fang\} and Wang, \{Jin Shung\} and Wang, \{Pai Yong\} and Chen, \{Nie Chuan\} and Hsu, \{Nian Ching\}",

year = "2000",

month = jan,

doi = "10.1143/JJAP.39.227",

language = "英语",

volume = "39",

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}

TY - JOUR

T1 - Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n+-p structures

AU - Chen, Jenn Fang

AU - Wang, Jin Shung

AU - Wang, Pai Yong

AU - Chen, Nie Chuan

AU - Hsu, Nian Ching

PY - 2000/1

Y1 - 2000/1

N2 - Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at Ea = 0.52 eV with a capture cross section 1.6 × 10-14 cm2 is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.

AB - Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-angstrom-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample without the AlAs layer, an equivalent circuit for the studied sample is developed. Based on this circuit, the admittance spectra are calculated and found to be consistent with the experimental spectra. From this result, the trap at Ea = 0.52 eV with a capture cross section 1.6 × 10-14 cm2 is believed to result from the resistance-capacitance time constant effect due to the thermionic emission of holes over the AlAs barrier and the activation energy corresponds to the AlAs/GaAs valence-band offset. The results of the thermal stimulation current further support this conclusion.

UR - https://www.scopus.com/pages/publications/0033884991

U2 - 10.1143/JJAP.39.227

DO - 10.1143/JJAP.39.227

M3 - 文章

AN - SCOPUS:0033884991

SN - 0021-4922

VL - 39

SP - 227

EP - 230

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1

ER -

Admittance spectroscopy and thermal stimulation current for band-offset characteristics in AlAs/GaAs n⁺-p structures

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