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Adsorption and desorption of stilbene from the Ag/Ge(111)-√3 surface

  • H. C. Wu
  • , L. W. Chou
  • , L. C. Wang
  • , Y. R. Lee
  • , C. M. Wei
  • , J. C. Jiang
  • , C. Su*
  • , J. C. Lin
  • *Corresponding author for this work
  • National Taiwan Normal University
  • Academia Sinica - Institute of Atomic and Molecular Sciences
  • National Taiwan University of Science and Technology
  • Academia Sinica - Institute of Physics
  • National Taipei University of Technology

Research output: Contribution to journal › Journal Article › peer-review

5 Scopus citations

Abstract

The adsorption and desorption of stilbene on Ag/Ge(111)-(√3 × √3)R30° (Ag/Ge(111)-√3) were investigated using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), temperature-programmed desorption (TPD), and density functional theory (DFT). Both trans- and cis-stilbenes form a (2 × 1) overlayer structure on Ag/Ge(111)-√3 at a coverage of ∼1 ML. The STM images show parallel strips with three equivalent directions, indicating a self-ordered molecular structure. At a coverage of less than 1 ML, the TPD of cis-stilbene shows only one peak, attributed to submonolayer desorption. The TPD peaks are indistinguishable for desorption of irans-stilbene from the surface submonolayer and multilayer. This is due to the simultaneous desorption and/or thinning of adsorbed multilayers during the TPD process, as determined from the STM analysis of adsorbed irans-stilbene structures before and after annealing. The TPD traces fit the half-order kinetics for molecular desorption of stilbene from Ag/Ge(111)-√3 with desorption energies of 20.1 (cis-) and 21.3 kcal/mol (trans-), which are comparable with the calculated values using me DFT method. A plausible explanation for the stilbene desorption process on Ag/Ge(111)-√3 is proposed and discussed.

Original languageEnglish
Pages (from-to)14464-14474
Number of pages11
JournalJournal of Physical Chemistry C
Volume112
Issue number37
DOIs
StatePublished - 18 09 2008
Externally publishedYes

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