Advanced VLSI circuit simulation using the BSIM plus model

Sudhir M. Gowdd; Binj J. Sheu; Chen Hao Chang

Advanced VLSI circuit simulation using the BSIM plus model

Sudhir M. Gowdd^*, Binj J. Sheu, Chen Hao Chang

^*Corresponding author for this work

University of Southern California

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The BSIM plus model has been developed to serve the needs of circuit designers using sub-half micron CMOS technologies. Important issues including output conductance modeling, subthreshold conduction, temperature effects, noise effects, and charge conservation are addressed. The BSIM plus model is suitable for the design of several circuit families including analog, digital, mixed-signal, low-power, switched-capacitor and self-timed VLSI circuits. Simulation results on operational amplifier, DRAM, self-time adder and band-gap reference circuits are presented.

Original language	English
Title of host publication	Proceedings of the Custom Integrated Circuits Conference
Publisher	Publ by IEEE
Pages	14.3.1-14.3.5
ISBN (Print)	0780308263
State	Published - 1993
Externally published	Yes
Event	Proceedings of the IEEE 1993 Custom Integrated Circuits Conference - San Diego, CA, USA Duration: 09 05 1993 → 12 05 1993

Publication series

Name	Proceedings of the Custom Integrated Circuits Conference
ISSN (Print)	0886-5930

Conference

Conference	Proceedings of the IEEE 1993 Custom Integrated Circuits Conference
City	San Diego, CA, USA
Period	09/05/93 → 12/05/93

Cite this

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title = "Advanced VLSI circuit simulation using the BSIM plus model",

abstract = "The BSIM plus model has been developed to serve the needs of circuit designers using sub-half micron CMOS technologies. Important issues including output conductance modeling, subthreshold conduction, temperature effects, noise effects, and charge conservation are addressed. The BSIM plus model is suitable for the design of several circuit families including analog, digital, mixed-signal, low-power, switched-capacitor and self-timed VLSI circuits. Simulation results on operational amplifier, DRAM, self-time adder and band-gap reference circuits are presented.",

author = "Gowdd, {Sudhir M.} and Sheu, {Binj J.} and Chang, {Chen Hao}",

year = "1993",

language = "英语",

isbn = "0780308263",

series = "Proceedings of the Custom Integrated Circuits Conference",

publisher = "Publ by IEEE",

pages = "14.3.1--14.3.5",

booktitle = "Proceedings of the Custom Integrated Circuits Conference",

note = "Proceedings of the IEEE 1993 Custom Integrated Circuits Conference ; Conference date: 09-05-1993 Through 12-05-1993",

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Advanced VLSI circuit simulation using the BSIM plus model. / Gowdd, Sudhir M.; Sheu, Binj J.; Chang, Chen Hao.
Proceedings of the Custom Integrated Circuits Conference. Publ by IEEE, 1993. p. 14.3.1-14.3.5 (Proceedings of the Custom Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Advanced VLSI circuit simulation using the BSIM plus model

AU - Gowdd, Sudhir M.

AU - Sheu, Binj J.

AU - Chang, Chen Hao

PY - 1993

Y1 - 1993

N2 - The BSIM plus model has been developed to serve the needs of circuit designers using sub-half micron CMOS technologies. Important issues including output conductance modeling, subthreshold conduction, temperature effects, noise effects, and charge conservation are addressed. The BSIM plus model is suitable for the design of several circuit families including analog, digital, mixed-signal, low-power, switched-capacitor and self-timed VLSI circuits. Simulation results on operational amplifier, DRAM, self-time adder and band-gap reference circuits are presented.

AB - The BSIM plus model has been developed to serve the needs of circuit designers using sub-half micron CMOS technologies. Important issues including output conductance modeling, subthreshold conduction, temperature effects, noise effects, and charge conservation are addressed. The BSIM plus model is suitable for the design of several circuit families including analog, digital, mixed-signal, low-power, switched-capacitor and self-timed VLSI circuits. Simulation results on operational amplifier, DRAM, self-time adder and band-gap reference circuits are presented.

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M3 - 会议稿件

AN - SCOPUS:0027239105

SN - 0780308263

T3 - Proceedings of the Custom Integrated Circuits Conference

SP - 14.3.1-14.3.5

BT - Proceedings of the Custom Integrated Circuits Conference

PB - Publ by IEEE

T2 - Proceedings of the IEEE 1993 Custom Integrated Circuits Conference

Y2 - 9 May 1993 through 12 May 1993

ER -

Advanced VLSI circuit simulation using the BSIM plus model

Abstract

Publication series

Conference

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