Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors

Kuang Po Hsueh; Po Wei Cheng; Wen Yen Lin; Hsien Chin Chiu; Jinn Kong Sheu; Yu Hsiang Yeh

doi:10.1117/12.2074817

Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors

Kuang Po Hsueh, Po Wei Cheng, Wen Yen Lin, Hsien Chin Chiu, Jinn Kong Sheu, Yu Hsiang Yeh

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this study, n-type Al-doped Mg_xZn_1-xO (AMZO) films were deposited onto p-Al_0.08Ga_0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at V_bias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.

Original language	English
Title of host publication	International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014
Editors	Aulia Nasution
Publisher	SPIE
ISBN (Electronic)	9781628415599
DOIs	https://doi.org/10.1117/12.2074817
State	Published - 2015
Event	International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014 - Sanur, Bali, Indonesia Duration: 14 10 2014 → 15 10 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9444
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014
Country/Territory	Indonesia
City	Sanur, Bali
Period	14/10/14 → 15/10/14

Bibliographical note

Publisher Copyright:
© 2015 SPIE.

Keywords

AlO
MgO
MgZnO
ZnO
heterojunction
photo-detector
rapid thermal annealing
responsivity
sputter
ultraviolet

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10.1117/12.2074817

Cite this

Hsueh, K. P., Cheng, P. W., Lin, W. Y., Chiu, H. C., Sheu, J. K., & Yeh, Y. H. (2015). Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors. In A. Nasution (Ed.), International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014 Article 94440K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9444). SPIE. https://doi.org/10.1117/12.2074817

@inproceedings{151600fe12054b3d8edc3bd050c8e5cb,

title = "Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors",

abstract = "In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.",

keywords = "AlO, MgO, MgZnO, ZnO, heterojunction, photo-detector, rapid thermal annealing, responsivity, sputter, ultraviolet",

author = "Hsueh, {Kuang Po} and Cheng, {Po Wei} and Lin, {Wen Yen} and Chiu, {Hsien Chin} and Sheu, {Jinn Kong} and Yeh, {Yu Hsiang}",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014 ; Conference date: 14-10-2014 Through 15-10-2014",

year = "2015",

doi = "10.1117/12.2074817",

language = "英语",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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Hsueh, KP, Cheng, PW, Lin, WY, Chiu, HC, Sheu, JK & Yeh, YH 2015, Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors. in A Nasution (ed.), International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014., 94440K, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9444, SPIE, International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014, Sanur, Bali, Indonesia, 14/10/14. https://doi.org/10.1117/12.2074817

Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors. / Hsueh, Kuang Po; Cheng, Po Wei; Lin, Wen Yen et al.
International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014. ed. / Aulia Nasution. SPIE, 2015. 94440K (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9444).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors

AU - Hsueh, Kuang Po

AU - Cheng, Po Wei

AU - Lin, Wen Yen

AU - Chiu, Hsien Chin

AU - Sheu, Jinn Kong

AU - Yeh, Yu Hsiang

PY - 2015

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N2 - In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.

AB - In this study, n-type Al-doped MgxZn1-xO (AMZO) films were deposited onto p-Al0.08Ga0.92N by using radiofrequency magnetron sputtering followed by annealing at 800°C in nitrogen ambient for 60 s. The film was highly transparent and had transmittances exceeding 95% in the visible region and a sharp absorption edge visible in the ultraviolet region. A high leakage current was obtained in the current-voltage (I-V) characteristics of the GMZO/AlGaN n-p junction diode. The AMZO/AlGaN photodetector based on the AMZO film exhibited a dark current of 1.56 μA at Vbias =-3V. The peak responsivity of the photodetector was approximately 200 nm and a cutoff wavelength was observed at approximately 250 nm.

KW - AlO

KW - MgO

KW - MgZnO

KW - ZnO

KW - heterojunction

KW - photo-detector

KW - rapid thermal annealing

KW - responsivity

KW - sputter

KW - ultraviolet

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M3 - 会议稿件

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014

A2 - Nasution, Aulia

PB - SPIE

T2 - International Seminar on Photonics, Optics, and Its Applications, ISPhOA 2014

Y2 - 14 October 2014 through 15 October 2014

ER -

Al-doped MgZnO/p-AlGaN heterojunction and their application in ultraviolet photodetectors

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