Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

Shih Cheng Yang; Hsien Chin Chiu; Yi Jen Chan; Hao Hsiung Lin; Jenn Ming Kuo

doi:10.1109/16.974726

Al _xGa _1-x) _0.5In _0.5P /In _0.15Ga _0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

Shih Cheng Yang^*
, Hsien Chin Chiu
, Yi Jen Chan
, Hao Hsiung Lin
, Jenn Ming Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

The quaternary (Al _xGa _1-x) _0.5In _0.5P (0 ≤ x ≤ 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al _xGa _1-x) _0.5In _0.5P materials and concluded that the best composition for improving the device performance is by substituting 30% (x = 0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (φ _B) of (Al _xGa _1-x) _0.5In _0.5P layers were 0.85 ∼ 1.00 eV. We successfully realized the (Al _xGa _1-x) _0.5In _0.5P /In _0.15Ga _0.85As (x = 0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent de, microwave, and power characteristics.

Original language	English
Pages (from-to)	2906-2910
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	12
DOIs	https://doi.org/10.1109/16.974726
State	Published - 12 2001
Externally published	Yes

Keywords

AlGaInP
Doped-channel FET
rf power performance

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10.1109/16.974726

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@article{f433b5e82030428e9fc109aa99a11f19,

title = "Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications",

abstract = "The quaternary (Al xGa 1-x) 0.5In 0.5P (0 ≤ x ≤ 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al xGa 1-x) 0.5In 0.5P materials and concluded that the best composition for improving the device performance is by substituting 30\% (x = 0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (φ B) of (Al xGa 1-x) 0.5In 0.5P layers were 0.85 ∼ 1.00 eV. We successfully realized the (Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent de, microwave, and power characteristics.",

keywords = "AlGaInP, Doped-channel FET, rf power performance",

author = "Yang, \{Shih Cheng\} and Chiu, \{Hsien Chin\} and Chan, \{Yi Jen\} and Lin, \{Hao Hsiung\} and Kuo, \{Jenn Ming\}",

year = "2001",

month = dec,

doi = "10.1109/16.974726",

language = "英语",

volume = "48",

pages = "2906--2910",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

AU - Yang, Shih Cheng

AU - Chiu, Hsien Chin

AU - Chan, Yi Jen

AU - Lin, Hao Hsiung

AU - Kuo, Jenn Ming

PY - 2001/12

Y1 - 2001/12

N2 - The quaternary (Al xGa 1-x) 0.5In 0.5P (0 ≤ x ≤ 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al xGa 1-x) 0.5In 0.5P materials and concluded that the best composition for improving the device performance is by substituting 30% (x = 0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (φ B) of (Al xGa 1-x) 0.5In 0.5P layers were 0.85 ∼ 1.00 eV. We successfully realized the (Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent de, microwave, and power characteristics.

AB - The quaternary (Al xGa 1-x) 0.5In 0.5P (0 ≤ x ≤ 1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (Al xGa 1-x) 0.5In 0.5P materials and concluded that the best composition for improving the device performance is by substituting 30% (x = 0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (φ B) of (Al xGa 1-x) 0.5In 0.5P layers were 0.85 ∼ 1.00 eV. We successfully realized the (Al xGa 1-x) 0.5In 0.5P /In 0.15Ga 0.85As (x = 0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent de, microwave, and power characteristics.

KW - AlGaInP

KW - Doped-channel FET

KW - rf power performance

UR - https://www.scopus.com/pages/publications/0035694431

U2 - 10.1109/16.974726

DO - 10.1109/16.974726

M3 - 文章

AN - SCOPUS:0035694431

SN - 0018-9383

VL - 48

SP - 2906

EP - 2910

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Al _xGa _1-x) _0.5In _0.5P /In _0.15Ga _0.85As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications

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Keywords

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