Al2O3/HfO2/Al2O3 (AHA) Tunneling Layer for High Performance Gd2O3 Nanocrystal Nonvolatile Memory Application

Chih-Ting Lin, Chia-Hsin Chen, Po-Wei Huang, Jer-Chyi Wang, Chao-Sung Lai, Chi-Fong Ai, Wen-Fu Tsai

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2011
Event	2011 4th IEEE International NanoElectronics Conference (IEEE INEC 2011) - Taoyuan, Taiwan Duration: 21 06 2011 → 24 06 2011

Conference	2011 4th IEEE International NanoElectronics Conference (IEEE INEC 2011)
Period	21/06/11 → 24/06/11

Cite this

@conference{4b7b866f22fe4af99d36add77439e5e3,

title = "Al2O3/HfO2/Al2O3 (AHA) Tunneling Layer for High Performance Gd2O3 Nanocrystal Nonvolatile Memory Application",

author = "Chih-Ting Lin and Chia-Hsin Chen and Po-Wei Huang and Jer-Chyi Wang and Chao-Sung Lai and Chi-Fong Ai and Wen-Fu Tsai",

year = "2011",

language = "American English",

note = "2011 4th IEEE International NanoElectronics Conference (IEEE INEC 2011) ; Conference date: 21-06-2011 Through 24-06-2011",

}

TY - CONF

T1 - Al2O3/HfO2/Al2O3 (AHA) Tunneling Layer for High Performance Gd2O3 Nanocrystal Nonvolatile Memory Application

AU - Lin, Chih-Ting

AU - Chen, Chia-Hsin

AU - Huang, Po-Wei

AU - Wang, Jer-Chyi

AU - Lai, Chao-Sung

AU - Ai, Chi-Fong

AU - Tsai, Wen-Fu

PY - 2011

Y1 - 2011

M3 - Proceeding

T2 - 2011 4th IEEE International NanoElectronics Conference (IEEE INEC 2011)

Y2 - 21 June 2011 through 24 June 2011

ER -