AlGaAs/GaAs Heterostructure Field-Effect Transistors(HFET's)Grown by Molecular Beam Epitaxy

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Original language	American English
Pages (from-to)	428-432
Journal	Proceedings of the National Science Council. Part A, Physical Science and Engineering
Volume	17
Issue number	6
State	Published - 1993

Cite this

@article{28848db240aa43bc856ed28805e0036c,

title = "AlGaAs/GaAs Heterostructure Field-Effect Transistors(HFET's)Grown by Molecular Beam Epitaxy",

keywords = "AlGaAs/GaAs, Heterostructure FET's, Molecular beam epitaxy",

author = "益仁詹 and 振瀛綦 and 佳霖謝 and Ray-Ming Lin and 明達楊",

year = "1993",

language = "American English",

volume = "17",

pages = "428--432",

journal = "Proceedings of the National Science Council. Part A, Physical Science and Engineering",

issn = "0255-6588",

publisher = "National Science Council",

number = "6",

}

TY - JOUR

T1 - AlGaAs/GaAs Heterostructure Field-Effect Transistors(HFET's)Grown by Molecular Beam Epitaxy

AU - 詹, 益仁

AU - 綦, 振瀛

AU - 謝, 佳霖

AU - Lin, Ray-Ming

AU - 楊, 明達

PY - 1993

Y1 - 1993

KW - AlGaAs/GaAs

KW - Heterostructure FET's

KW - Molecular beam epitaxy

M3 - Journal Article

SN - 0255-6588

VL - 17

SP - 428

EP - 432

JO - Proceedings of the National Science Council. Part A, Physical Science and Engineering

JF - Proceedings of the National Science Council. Part A, Physical Science and Engineering

IS - 6

ER -