AlGalnP LEDs reliability dependence on different Mg doping concentration

Y. C. Huang, Y. S. Wang, W. J. Wang, N. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, we report the influence mechanism of different Mg doping concentration in LED P-type layer. We concluded from analyses of the I-V * C-V and Lop that this process is due to Mg out diffusion.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1869-1871
Number of pages3
StatePublished - 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 08 201101 09 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Country/TerritoryAustralia
CitySydney
Period28/08/1101/09/11

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