AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou Jinn Chang; Hung Hung; Yi Chao Lin; Ming Hsien Wu; Hon Kuan; Ray Ming Lin

doi:10.1143/JJAP.46.2471

AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Shoou Jinn Chang^*, Hung Hung, Yi Chao Lin, Ming Hsien Wu, Hon Kuan, Ray Ming Lin

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10^-9, 3.3 × 10^-12, and 1.1 × 10^-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

Original language	English
Pages (from-to)	2471-2473
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2471
State	Published - 24 04 2007

Keywords

AIGaN
Low-temperature growth
MSM photodetector

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10.1143/JJAP.46.2471

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@article{5c88803c9c9b45b2abd725089152accb,

title = "AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers",

abstract = "We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.",

keywords = "AIGaN, Low-temperature growth, MSM photodetector",

author = "Chang, {Shoou Jinn} and Hung Hung and Lin, {Yi Chao} and Wu, {Ming Hsien} and Hon Kuan and Lin, {Ray Ming}",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2471",

language = "英语",

volume = "46",

pages = "2471--2473",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

AU - Chang, Shoou Jinn

AU - Hung, Hung

AU - Lin, Yi Chao

AU - Wu, Ming Hsien

AU - Kuan, Hon

AU - Lin, Ray Ming

PY - 2007/4/24

Y1 - 2007/4/24

N2 - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

AB - We report the fabrication of AlGaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with low temperature (LT)-AlGaN and LT-GaN cap layers. It was found that the dark currents were 8.3 × 10-9, 3.3 × 10-12, and 1.1 × 10-12A under 5 V applied bias while the effective Schottky barrier heights were 0.781, 0.992, and 0.998 eV for the AlGaN photodetectors without a cap layer, with a LT-GaN cap layer and with a LT-AlGaN cap layer, respectively. It was also found that the maximum responsivities were 0.0361. 0.0328. and 0.0315 A/W for the AlGaN photodetectors without the cap layer, with the LT-GaN cap layer and with the LT-AlGaN cap layer, respectively.

KW - AIGaN

KW - Low-temperature growth

KW - MSM photodetector

UR - http://www.scopus.com/inward/record.url?scp=34547898464&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.2471

DO - 10.1143/JJAP.46.2471

M3 - 文章

AN - SCOPUS:34547898464

SN - 0021-4922

VL - 46

SP - 2471

EP - 2473

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers

Abstract

Keywords

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