AlGaN/GaN High-Electron-Mobility Transistors on a Silicon Substrate under Uniaxial Tensile Strain

Hsuan Ling Kao*, Hsien Chin Chiu, Shuang Hao Chuang, H. H. Hsu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

This paper reports pulsed DC and RF characteristics of GaN high-electron-mobility transistors (HEMTs) on a silicon substrate under external mechanical tensile strain. Tensile strain enhanced two-dimensional electron gas (2DEG) density resulted in increasing ID, f T and f max at CW measurement. Eliminating self-heating by pulse measurement, DC and RF characteristics between flat and bend devices were slightly increased for small-width devices, and decreased for wide-width devices. This was because maximum electron drift velocity was reduced by a hot phonon effect while 2DEG density increased by tensile strain for wide-width devices. Results indicated that the tensile strain on thinner substrates decreased the DC and RF performances of wide-width GaN-based RF power devices. This phenomenon should be considered while using GaN-based RF power devices for compact packages, especially in high-power applications.

Original languageEnglish
Article number045017
JournalECS Journal of Solid State Science and Technology
Volume9
Issue number4
DOIs
StatePublished - 05 01 2020

Bibliographical note

Publisher Copyright:
© 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

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