Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays

C. N. Chen; G. M. Wu; W. S. Feng

doi:10.4028/3-908451-31-0.371

Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays

C. N. Chen, G. M. Wu^*, W. S. Feng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N₂ or N ₂/O₂ environment. The energy density ranged 250-400 mJ/cm², and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31×0.33 μm², and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm²/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 10⁶.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	371-374
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.371
State	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 10 09 2006 → 14 09 2006

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	124-126
ISSN (Print)	1012-0394

Conference

Conference	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country/Territory	Korea, Republic of
City	Jeju
Period	10/09/06 → 14/09/06

Keywords

AMOLED
Excimer laser
Polycrystalline silicon
Thin film
display

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10.4028/3-908451-31-0.371

Cite this

Chen, C. N., Wu, G. M., & Feng, W. S. (2007). Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 371-374). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.371

@inproceedings{dae6029d7c9c423fb4b24fb3de88d6e6,

title = "Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays",

abstract = "Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N 2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99\%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31×0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.",

keywords = "AMOLED, Excimer laser, Polycrystalline silicon, Thin film, display",

author = "Chen, \{C. N.\} and Wu, \{G. M.\} and Feng, \{W. S.\}",

year = "2007",

doi = "10.4028/3-908451-31-0.371",

language = "英语",

isbn = "3908451310",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "371--374",

booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",

address = "瑞士",

edition = "PART 1",

note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",

}

Chen, CN, Wu, GM & Feng, WS 2007, Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 371-374, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 10/09/06. https://doi.org/10.4028/3-908451-31-0.371

Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays. / Chen, C. N.; Wu, G. M.; Feng, W. S.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 371-374 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays

AU - Chen, C. N.

AU - Wu, G. M.

AU - Feng, W. S.

PY - 2007

Y1 - 2007

N2 - Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N 2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31×0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.

AB - Low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) are demanded to fabricate high performance liquid crystal displays (LCD) and organic light-emitting diode displays (OLED). The mobility of poly-Si TFT can be two orders of magnitude higher than that of amorphous Si (a-Si) TFT. Excimer laser annealing has been studied to be the most promising technology to meet the stringent requirement in high speed operation. The process parameters were identified as a-Si thickness, laser energy density, overlap ratio, annealing atmosphere and pre-clean condition. The a-Si layer of 40-50 nm was deposited by plasma enhanced chemical vapor deposition (PECVD). The XeCl excimer laser was irradiated on the a-Si film at room temperature under N2 or N 2/O2 environment. The energy density ranged 250-400 mJ/cm2, and the overlap ratio was 95-99%. The highly aligned poly-Si array thin film could be obtained. The grain size has been about 0.31×0.33 μm2, and the regular arrangement in poly-Si grains was discussed. In addition, the PMOS TFT has been fabricated from the aligned poly-Si array. The mobility was as high as 100 cm2/Vs and the sub-threshold swing was around 0.24 V/dec. The threshold voltage was -1.25 V and the on/off current ratio was about 106.

KW - AMOLED

KW - Excimer laser

KW - Polycrystalline silicon

KW - Thin film

KW - display

UR - https://www.scopus.com/pages/publications/37149018210

U2 - 10.4028/3-908451-31-0.371

DO - 10.4028/3-908451-31-0.371

M3 - 会议稿件

AN - SCOPUS:37149018210

SN - 3908451310

SN - 9783908451310

T3 - Solid State Phenomena

SP - 371

EP - 374

BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

PB - Trans Tech Publications Ltd

T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006

Y2 - 10 September 2006 through 14 September 2006

ER -

Aligned polycrystalline silicon array thin film by XeCI excimer laser annealing for AMOLED displays

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