Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

C. T. Liang; Kuang Yao Chen; N. C. Chen; P. H. Chang; Chin An Chang

doi:10.1063/1.2357005

Al_0.15Ga_0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

C. T. Liang^*, Kuang Yao Chen, N. C. Chen, P. H. Chang, Chin An Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

We report on experimental studies of Al_0.15Ga _0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of Al_xGa_1-xN/GaN HEMT structures with the mature Si technology in industry.

Original language	English
Article number	132107
Journal	Applied Physics Letters
Volume	89
Issue number	13
DOIs	https://doi.org/10.1063/1.2357005
State	Published - 2006

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title = "Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates",

abstract = "We report on experimental studies of Al0.15Ga 0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry.",

author = "Liang, {C. T.} and Chen, {Kuang Yao} and Chen, {N. C.} and Chang, {P. H.} and Chang, {Chin An}",

year = "2006",

doi = "10.1063/1.2357005",

language = "英语",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

AU - Liang, C. T.

AU - Chen, Kuang Yao

AU - Chen, N. C.

AU - Chang, P. H.

AU - Chang, Chin An

PY - 2006

Y1 - 2006

N2 - We report on experimental studies of Al0.15Ga 0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry.

AB - We report on experimental studies of Al0.15Ga 0.85N/GaN high electron mobility transistor (HEMT) structures grown on p-type Si (111) substrates. By introducing an ultrathin SiN layer during the crystal growth, the Hall mobility of the HEMT structure can be greatly enhanced (greater than three times). This SiN treatment technique also allows the observation of Shubnikov-de Haas oscillations which is not possible in the untreated HEMT structure. Our experimental results pave the way for the integration of AlxGa1-xN/GaN HEMT structures with the mature Si technology in industry.

UR - http://www.scopus.com/inward/record.url?scp=33749260490&partnerID=8YFLogxK

U2 - 10.1063/1.2357005

DO - 10.1063/1.2357005

M3 - 文章

AN - SCOPUS:33749260490

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132107

ER -

Al_0.15Ga_0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

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