@inproceedings{2925a1be47004c19941908cbf0fbd0aa,
title = "Alternating PSM for sub-60 nm DRAM gate single exposure",
abstract = "The fast pattern shrinkage of DRAM has driven the lithography technology into the low k1 regime for sub-60 nm technology node. There are a lot of resolution enhancement techniques (RETs) e.g. OPC (Optical Proximity Correction), SB (Scattering Bar), SRAF (Sub-Resolution Assist Features) and DDL (Double Dipole Lithography) and Alternating PSM to enable the low k1 lithography [4]. However, among the RETs, the alternating PSM technique is a high cost solution because double exposure is needed to avoid phase conflict error. Therefore, the implementation of alternating PSM with single exposure for gate conductor layer is the main purpose of this study. Many kinds of pattern and phase designs in the main cell and periphery were investigated.",
keywords = "Alternating PSM, DDL (Double Dipole Lithography), Exposure window (DOF), NA, OPC (Optical Proximity Correction), Phase conflict, SRAF (Sub-Resolution Assist Features), k1",
author = "Kunyuan Chen and Richard Lu and Fu, \{Kuo Kuei\} and Hsia, \{Chung Ping\} and Shih, \{Chiang Lin\} and Lin, \{Jeng Ping\}",
year = "2006",
doi = "10.1117/12.685295",
language = "英语",
isbn = "0819464449",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Photomask Technology 2006",
note = "25th Annual BACUS Symposium on Photmask Technology 2006 ; Conference date: 19-09-2006 Through 22-09-2006",
}