Amorphous ZnSnxOyFabricated at Room-Temperature for Flexible pH-EGFET Sensor

Kanishk Singh; See Tong Pang; Tung Ming Pan

doi:10.1109/TED.2020.3047878

Amorphous ZnSn_xO_yFabricated at Room-Temperature for Flexible pH-EGFET Sensor

Kanishk Singh, See Tong Pang, Tung Ming Pan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

In this article, the zinc-Tin oxide (ZnSnxOy) based sensing membrane fabricated on a flexible polyethylene terephthalate substrate at room temperature as an extended-gate field-effect transistor (EGFET) is investigated for pH-sensing applications. The ZnSnxOy-based EGFET sensor showed a super-Nernstian pH response (70.79 mV/pH) with very good linearity (0.997), a low hysteresis voltage (6 mV), and a low drift rate (0.25 mV/h). The high pH sensing behavior is attributed to the redox reaction of amphoteric zinc oxide (ZnO) in different pH solutions. Furthermore, good flexibility and bendability were shown by the ZnSnxOy-based EGFET sensor after 400 bending cycles.

Original language	English
Article number	9321186
Pages (from-to)	793-797
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	2
DOIs	https://doi.org/10.1109/TED.2020.3047878
State	Published - 02 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Extended-gate field-effect transistor (EGFET)
flexible
polyethylene terephthalate (PET)
zinc-Tin oxide (ZnSny)

Access to Document

10.1109/TED.2020.3047878

Cite this

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title = "Amorphous ZnSnxOyFabricated at Room-Temperature for Flexible pH-EGFET Sensor",

abstract = "In this article, the zinc-Tin oxide (ZnSnxOy) based sensing membrane fabricated on a flexible polyethylene terephthalate substrate at room temperature as an extended-gate field-effect transistor (EGFET) is investigated for pH-sensing applications. The ZnSnxOy-based EGFET sensor showed a super-Nernstian pH response (70.79 mV/pH) with very good linearity (0.997), a low hysteresis voltage (6 mV), and a low drift rate (0.25 mV/h). The high pH sensing behavior is attributed to the redox reaction of amphoteric zinc oxide (ZnO) in different pH solutions. Furthermore, good flexibility and bendability were shown by the ZnSnxOy-based EGFET sensor after 400 bending cycles.",

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author = "Kanishk Singh and Pang, {See Tong} and Pan, {Tung Ming}",

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