@inproceedings{8446259aac56424f95420a5918053bc4,
title = "An accurate MOS transistor model for submicron VLSI circuits--BSIM_plus",
abstract = "An accurate MOS transistor model that is suitable for the simulation of analog and digital circuits with deep submicron channel-length transistors is presented. The BSIM_plus model uses a compact set of device physics-based parameters. Continuity of the drain current and derivatives in the subthreshold, linear, and saturation regions of operation has been achieved. A novel geometric dependence scheme allows consistent simulation of transistors over the entire design space. Experimental results on NMOS and PMOS transistors with effective channel lengths down to 0.15 μm are presented.",
author = "Gowda, {Sudhir M.} and Sheu, {Bing J.} and Cable, {James S.}",
year = "1991",
language = "英语",
isbn = "0780300157",
series = "Proceedings of the Custom Integrated Circuits Conference",
publisher = "Publ by IEEE",
booktitle = "Proceedings of the Custom Integrated Circuits Conference",
note = "Proceedings of the IEEE 1991 Custom Integrated Circuits Conference ; Conference date: 12-05-1991 Through 15-05-1991",
}