An efficient parameter extraction method using statistical optimization in S-CMOS deep-submicron/nanometer model

Yoondong Park; Steve H. Jen; Bing Sheu; Heesook Yoon; In Gyeom Kim

doi:10.1109/ISCAS.2002.1010683

An efficient parameter extraction method using statistical optimization in S-CMOS deep-submicron/nanometer model

Yoondong Park, Steve H. Jen, Bing Sheu, Heesook Yoon, In Gyeom Kim

Research output: Contribution to journal › Journal Article › peer-review

Abstract

An efficient MOSFET modeling methodology with statistical optimization has been introduced to facilitate advanced mixed-signal circuit design. Based on the properties of the S-CMOS model, a combination of local optimization and the group-device extraction strategy is adopted for parameter extraction. By using the statistical method with Excel solver, very accurate parameter extraction procedure was developed for the S-CMOS model and was implemented with the optimization software. An accurate parameter set is extracted in accordance with the measurement data of TSMC 0.35-μm technology from MOSIS Service with LMEE method. The S-CMOS model was implemented into SPICE3f3 simulator. Several analog and digital circuits were simulated using popular BSIM3v3 and compared with S-CMOS model.

Original language	English
Pages (from-to)	V/233-V/236
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	5
DOIs	https://doi.org/10.1109/ISCAS.2002.1010683
State	Published - 2002
Externally published	Yes

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title = "An efficient parameter extraction method using statistical optimization in S-CMOS deep-submicron/nanometer model",

abstract = "An efficient MOSFET modeling methodology with statistical optimization has been introduced to facilitate advanced mixed-signal circuit design. Based on the properties of the S-CMOS model, a combination of local optimization and the group-device extraction strategy is adopted for parameter extraction. By using the statistical method with Excel solver, very accurate parameter extraction procedure was developed for the S-CMOS model and was implemented with the optimization software. An accurate parameter set is extracted in accordance with the measurement data of TSMC 0.35-μm technology from MOSIS Service with LMEE method. The S-CMOS model was implemented into SPICE3f3 simulator. Several analog and digital circuits were simulated using popular BSIM3v3 and compared with S-CMOS model.",

author = "Yoondong Park and Jen, {Steve H.} and Bing Sheu and Heesook Yoon and Kim, {In Gyeom}",

year = "2002",

doi = "10.1109/ISCAS.2002.1010683",

language = "英语",

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AU - Park, Yoondong

AU - Jen, Steve H.

AU - Sheu, Bing

AU - Yoon, Heesook

AU - Kim, In Gyeom

PY - 2002

Y1 - 2002

N2 - An efficient MOSFET modeling methodology with statistical optimization has been introduced to facilitate advanced mixed-signal circuit design. Based on the properties of the S-CMOS model, a combination of local optimization and the group-device extraction strategy is adopted for parameter extraction. By using the statistical method with Excel solver, very accurate parameter extraction procedure was developed for the S-CMOS model and was implemented with the optimization software. An accurate parameter set is extracted in accordance with the measurement data of TSMC 0.35-μm technology from MOSIS Service with LMEE method. The S-CMOS model was implemented into SPICE3f3 simulator. Several analog and digital circuits were simulated using popular BSIM3v3 and compared with S-CMOS model.

AB - An efficient MOSFET modeling methodology with statistical optimization has been introduced to facilitate advanced mixed-signal circuit design. Based on the properties of the S-CMOS model, a combination of local optimization and the group-device extraction strategy is adopted for parameter extraction. By using the statistical method with Excel solver, very accurate parameter extraction procedure was developed for the S-CMOS model and was implemented with the optimization software. An accurate parameter set is extracted in accordance with the measurement data of TSMC 0.35-μm technology from MOSIS Service with LMEE method. The S-CMOS model was implemented into SPICE3f3 simulator. Several analog and digital circuits were simulated using popular BSIM3v3 and compared with S-CMOS model.

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DO - 10.1109/ISCAS.2002.1010683

M3 - 文章

AN - SCOPUS:0036294942

SN - 0271-4310

VL - 5

SP - V/233-V/236

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

ER -

An efficient parameter extraction method using statistical optimization in S-CMOS deep-submicron/nanometer model

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